SI5515DC

Si5515DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 FEATURES rDS(on) (W) 0.040 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V 0.052 @ VGS = 1.8 V 0.086 @ VGS = −4.5 V ID (A) 5.9 5.6 5.2 −4.1 −3.4 −2.9 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS D Load Switching for Portable Devices P Channel P-Channel −20 0.121 @ VGS = −2.5 V 0.171 @ VGS = −1.8 V 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code EC XXX Lot Traceability and Date Code Bottom View Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET Ordering Information: Si5515DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs Steady State −20 "8 Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State 20 Unit V 5.9 4.2 20 1.8 2.1 1.1 4.4 3.1 0.9 1.1 0.6 −55 to 150 260 −4.1 −2.9 −15 −1.8 2.1 1.1 −3 −2.2 −0.9 1.1 0.6 W _C A Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72221 S-41167—Rev. B, 14-Jun-04 www.vishay.com 1 Si5515DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS = −20 V, VGS = 0 V, TJ = 85_C On-State On State Drain Currenta ID( ) D(on) VDS w 5 V, VGS = 4.5 V VDS p −5 V, VGS = −4.5 V VGS = 4.5 V, ID = 4.4 A VGS = −4.5 V, ID = −3.0 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 2.5 V, ID = 4.1 A VGS = −2.5 V, ID = −2.5 A VGS = 1.8 V, ID = 1.9 A VGS = −1.8 V, ID = −0.6 A Forward Transconductancea gf fs VSD VDS = 10 V, ID = 4.4 A VDS = −10 V, ID = −3 A IS = 0.9 A, VGS = 0 V IS = −0.9 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 −15 0.032 0.069 0.036 0.097 0.042 0.137 22 8 0.8 −0.8 1.2 −1.2 0.040 0.086 0.045 0.121 0.052 0.171 S W 0.4 −0.4 1.0 −1.0 "100 "100 1 −1 5 −5 A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltagea V Dynamicb Total Gate Charge otal Gate Charge Qg N-Channel N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.4 A P-Channel VDS = −10 V VGS = −4 5 V ID = −3 A V, 4.5 V, N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = −10 V, RL = 10 W V 10 ID ^ −1 A, VGEN = −4.5 V, RG = 6 W A, 4.5 V, N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 0.9 A, di/dt = 100 A/ms IF = −0.9 A, di/dt = 100 A/ms N-Ch P-Ch 5 5.5 0.85 0.91 1 1.6 20 18 36 32 30 42 12 26 45 30 30 30 55 50 45 65 20 40 90 60 ns 7.5 8.5 nC nC Gate-Source Gate Source Charge Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr Gate-Drain Gate Drain Charge Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 20 TC = −55_C 25_C N−CHANNEL Transfer Characteristics 12 1.5 V 12 125_C 8 8 4 1V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 4 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 800 700 C − Capacitance (pF) 0.08 600 500 400 300 200 VGS = 4.5 V 100 0.00 0 4 8 12 16 20 0 0 Crss 4 Capacitance Ciss 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 Coss 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 4.4 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.4 A 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 72221 S-41167—Rev. B, 14-Jun-04 www.vishay.com 3 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.10 N−CHANNEL On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.08 ID = 4.4 A 0.06 ID = 2 A 0.04 TJ = 150_C TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 250 mA −0.0 −0.1 −0.2 −0.3 −0.4 −50 10 Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−4 10−3 10−2 10−1 Time (sec) 1 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area IDM Limited rDS(on) Limited 10 I D − Drain Current (A) P(t) = 0.0001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 1000 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 5 thru 3 V 12 I D − Drain Current (A) 2.5 V I D − Drain Current (A) 12 25_C 9 15 P-CHANNEL Transfer Characteristics TC = −55_C 9 2V 125_C 6 6 3 1.5 V 1V 0 1 2 3 4 5 3 0 VDS − Drain-to-Source Voltage (V) Document Number: 72221 S-41167—Rev. B, 14-Jun-04 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) www.vishay.com 5 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) − On-Resistance ( W ) 0.25 VGS = 1.8 V 0.20 0.15 0.10 0.05 Crss 0.00 0 3 6 9 12 15 0 0 4 8 12 16 20 C − Capacitance (pF) 600 Ciss 400 800 P-CHANNEL Capacitance VGS = 2.5 V VGS = 4.5 V 200 Coss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 3 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3 A 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 7 8 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.4 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.3 TJ = 150_C ID = 0.6 A 0.2 ID = 3 A 0.1 TJ = 25_C 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) www.vishay.com 6 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 −0.1 −0.2 −50 10 Power (W) 30 50 P-CHANNEL Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−4 10−3 10−2 10−1 Time (sec) 1 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area IDM Limited rDS(on) Limited 10 I D − Drain Current (A) P(t) = 0.0001 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Document Number: 72221 S-41167—Rev. B, 14-Jun-04 www.vishay.com 7 Si5515DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 P-CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 72221 S-41167—Rev. B, 14-Jun-04