Si5902BDC
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.065 at VGS = 10 V 0.100 at VGS = 4.5 V ID (A) 4a 4a Qg (Typ.) 2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
1206-8 ChipFET® (Dual)
1
S1 D1 D1 D2 D2 G1 S2 G2
• Load Switch for Portable Applications • DC/DC Converter
D1 D2
Marking Code
CE XXX
G1 Lot Traceability and Date Code S1 N-Channel MOSFET
G2
Bottom View
Part # Code
S2 N-Channel MOSFET
Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free) Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 4a 3.8a 3.7b, c 2.6b, c 10 2.6 1.3b, c 3.12 2.0 1.5b, c 0.8b, c - 55 to 150 260 Unit V
Continuous Drain Current (TJ = 150 °C)
A
Pulsed Drain Current Continuous Source-Drain Diode Current
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit RthJA t≤5s 70 85 Maximum Junction-to-Ambientb, f °C/W 33 40 Maximum Junction-to-Foot (Drain) Steady State RthJF Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 120 °C/W. Document Number: 70415 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 1
Si5902BDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
b
Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb
Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 3.1 A VGS = 4.5 V, ID = 1 A VDS = 15 V, ID = 3.1 A
Min. 30
Typ.
Max.
Unit V
27 -5 1.5 3 ± 100 1 5 10 0.053 0.081 5 0.065 0.100
mV/°C V nA µA A Ω S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
220 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 3.6 A VDS = 15 V, VGS = 4.5 V, ID = 3.6 A f = 1 MHz VDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 4.5 V, Rg = 1 Ω 50 25 4.5 2 0.7 0.7 3 15 80 12 25 4 VDD = 15 V, RL = 5.8 Ω ID ≅ 2.6 A, VGEN = 10 V, Rg = 1 Ω 12 10 5 TC = 25 °C IS = 2.6 A, VGS = 0 V 0.8 30 IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C 20 23 7 25 120 20 40 8 20 15 10 2.6 10 1.2 50 40 ns Ω 7 3 nC pF
A V ns nC ns
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 70415 S10-0548-Rev. B, 08-Mar-10
Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 5
16 I D - Drain Current (A)
VGS = 10 V thru 6 V 5V I D - Drain Current (A)
4
12
3 TC = 25 °C 2 TC = 125 °C 1
8
4V
4 3V 0 0.0
0.5
1.0
1.5
2.0
2.5
0 0.0
TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.20 300
Transfer Characteristics
RDS(on) - On-Resistance (Ω)
0.16 C - Capacitance (pF)
250 Ciss 200
0.12
VGS = 4.5 V
150
0.08 VGS = 10 V 0.04
100 Coss 50 Crss 0 5 10 15 20 25 30
0.00 0 5 10 ID - Drain Current (A) 15 20
0
VDS - Drain-to-Source Voltage (V)
On Resistance vs. Drain Current
10 VDS = 15 V, ID = 3.6 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance 1.6 1.8
Capacitance
VGS = 10 V, 4.5 V ID = 3.1 A
1.4 (Normalized)
6
1.2
4
VDS = 24 V, ID = 3.6 A
1.0
2
0.8
0 0 1 2 3 4 5 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge Document Number: 70415 S10-0548-Rev. B, 08-Mar-10
On-Resistance vs. Junction Temperature www.vishay.com 3
Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.20 ID = 3.1 A R DS(on) - On-Resistance (Ω) 0.16
I S - Source Current (A)
0.12 25 °C
TJ = 150 °C
TJ = 25 °C
0.08
125 °C
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.04 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temperature
2.4 50
RDS(on) vs. VGS vs. Temperature
2.2 ID = 250 µA 2.0 VGS(th) (V) Power (W)
40
30
1.8
20
1.6 10
1.4
1.2 - 50
- 25
0
25
50
75
100
125
150
0 0.0001 0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
10 Limited by RDS(on)* 100 µs
Single Pulse Power
I D - Drain Current (A)
1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 100 ms 1 s, 10 s DC
VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 70415 S10-0548-Rev. B, 08-Mar-10
Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6 4
5 3 4 Package Limited 3 Power Dissipation (W) ID - Drain Current (A)
2
2
1 1
0 0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 70415 S10-0548-Rev. B, 08-Mar-10
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Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2
2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse 0.01 10-4 10-3 10-2 10-1 1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70415.
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Document Number: 70415 S10-0548-Rev. B, 08-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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