Si5903DC
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)
0.155 @ VGS = --4.5 V --20 0.180 @ VGS = --3.6 V 0.260 @ VGS = --2.5 V
ID (A)
2.9 2.7 2.2
S1
S2
1206-8 ChipFETt
1
S1 D1 D1 D2 D2 G1 S2 G2
G1
G2
Marking Code DA XX Lot Traceability and Date Code
Part # Code Bottom View
D1 P-Channel MOSFET
D2 P-Channel MOSFET
Ordering Information: Si5903DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a on nuous ra urren Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
--20 12
Unit
V
2.9 2.1 10 --1.8 2.1 1.1 --55 to 150 260
2.1 1.5 --0.9 1.1 0.6 W _C A
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 30
Maximum
60 110 40
Unit
_C / C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71054 S-21251—Rev. B, 05-Aug-02 www.vishay.com
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Si5903DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS DSS ID(on) VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 12 V VDS = --16 V, VGS = 0 V VDS = --16 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --2.1 A Drain-Source On-State Resistancea rDS(on) DS(on) VGS = --3.6 V, ID = --2.0 A VGS = --2.5 V, ID = --1.7 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --10 V, ID = --2.1 A IS = --0.9 A, VGS = 0 V --10 0.130 0.150 0.215 5 --0.8 --1.2 0.155 0.180 0.260 S V Ω --0.6 100 --1 --5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = --0.9 A, di/dt = 100 A/ms VDD = -- 10 V, RL = 10 Ω --10 10 ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω VDS = --10 V, VGS = --4.5 V, ID = --2.1 A 3 0.9 0.6 13 35 25 25 40 20 55 40 40 80 ns 6 nC
Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10 VGS = 5 thru 4 V 8 I D -- Drain Current (A) 3.5 V 10
Transfer Characteristics
TC = --55_C
3V I D -- Drain Current (A)
8
25_C
6 2.5 V 4 2V 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
6
125_C
4
2
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS -- Drain-to-Source Voltage (V) www.vishay.com
VGS -- Gate-to-Source Voltage (V) Document Number: 71054 S-21251—Rev. B, 05-Aug-02
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Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.4 r DS(on) -- On-Resistance ( Ω ) 600 500 C -- Capacitance (pF) Ciss 400 300 200 100 0.0 0 2 4 6 8 10 0 0 Crss 4 8 12 16 20 Coss
Capacitance
VGS = 2.5 V 0.3
0.2
VGS = 3.6 V
0.1
VGS = 4.5 V
ID -- Drain Current (A)
VDS -- Drain-to-Source Voltage (V)
Gate Charge
5 V GS -- Gate-to-Source Voltage (V) VDS = 10 V ID = 2.1 A 4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 2.1 A 1.4
3
r DS(on) -- On-Resistance (Ω ) (Normalized) 1.0 1.5 2.0 2.5 3.0
1.2
2
1.0
1
0.8
0 0.0
0.5
0.6 --50
--25
0
25
50
75
100
125
150
Qg -- Total Gate Charge (nC)
TJ -- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10 0.40 0.35 r DS(on) -- On-Resistance ( Ω )
On-Resistance vs. Gate-to-Source Voltage
ID = 2.1 A 0.30 0.25 0.20 0.15 0.10 0.05
I S -- Source Current (A)
TJ = 150_C
TJ = 25_C
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V)
Document Number: 71054 S-21251—Rev. B, 05-Aug-02
www.vishay.com
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Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 --0.1 --0.2 --50 10 Power (W) 30 50
Single Pulse Power
40
20
--25
0
25
50
75
100
125
150
0 10 --4
10 --3
10 --2
10 --1 Time (sec)
1
10
100
600
TJ -- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W
t1 t2
Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
2-4
Document Number: 71054 S-21251—Rev. B, 05-Aug-02
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