SI5935DC-T1

Si5935DC New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.086 @ VGS = - 4.5 V - 20 0.121 @ VGS = - 2.5 V 0.171 @ VGS = - 1.8 V FEATURES ID (A) - 4.1 - 3.4 - 2.9 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint APPLICATIONS D Load Switch D PA Switch D Battery Switch S1 S2 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 G1 G2 Marking Code DF XX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5935DC-T1 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State - 20 "8 Unit V - 4.1 - 2.9 - 15 - 1.8 2.1 1.1 - 55 to 150 260 -3 - 2.2 - 0.9 1.1 0.6 W _C A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72220 S-31260—Rev. A, 16-Jun-03 www.vishay.com 1 Si5935DC Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS p - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 2.5 A VGS = - 1.8 V, ID = - 0.6 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 10 V, ID = - 3 A IS = - 0.9 A, VGS = 0 V - 15 0.069 0.097 0.137 8 - 0.8 - 1.2 0.086 0.121 0.171 S V W - 0.4 1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 0.9 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A 5.5 0.91 1.6 18 32 42 26 30 30 50 65 40 60 ns 8.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 5 thru 3 V 12 I D - Drain Current (A) 2.5 V I D - Drain Current (A) 12 15 Transfer Characteristics TC = - 55_C 25_C 9 125_C 6 9 2V 6 3 1.5 V 1V 0 1 2 3 4 5 3 0 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Document Number: 72220 S-31260—Rev. A, 16-Jun-03 2 Si5935DC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) - On-Resistance ( W ) 0.25 VGS = 1.8 V 0.20 0.15 0.10 0.05 Crss 0.00 0 3 6 9 12 15 0 0 4 8 12 16 20 C - Capacitance (pF) 600 Ciss 400 800 Vishay Siliconix Capacitance VGS = 2.5 V VGS = 4.5 V 200 Coss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3 A 1.4 3 r DS(on) - On-Resistance (W ) (Normalized) 3 4 5 6 7 8 1.2 2 1.0 1 0.8 0 0 1 2 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.4 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.3 TJ = 150_C ID = 0.6 A 0.2 ID = 3 A 0.1 TJ = 25_C 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72220 S-31260—Rev. A, 16-Jun-03 www.vishay.com 3 Si5935DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 - 0.1 - 0.2 - 50 10 Power (W) 30 50 Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0 10 -4 10 -3 10 -2 10 -1 Time (sec) 1 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area IDM Limited rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.0001 1 ID(on) Limited 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72220 S-31260—Rev. A, 16-Jun-03 Si5935DC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix 1000 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72220 S-31260—Rev. A, 16-Jun-03 www.vishay.com 5