Si5975DC
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)
0.086 @ VGS = --4.5 V --12 0.127 @ VGS = --2.5 V 0.164 @ VGS = --1.8 V
ID (A)
--4.1 --3.4 --3.0 S1 S2
1206-8 ChipFETt
1
S1 D1 D1 D2 D2 G1 S2 G2
G1
G2
Marking Code DD XX Lot Traceability and Date Code
Part # Code Bottom View
D1 P-Channel MOSFET
D2 P-Channel MOSFET
Ordering Information: Si5975DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a on nuous ra urren Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
--12 8
Unit
V
--4.1 --3.0 --10 --1.8 2.1 1.1 --55 to 150 260
--3.1 --2.2 --0.9 1.1 0.6 W _C A
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 30
Maximum
60 110 40
Unit
_C / C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71320 S-21251—Rev. B, 05-Aug-02 www.vishay.com
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Si5975DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS DSS ID(on) VDS = VGS, ID = --1 mA VDS = 0 V, VGS = 8 V VDS = --9.6 V, VGS = 0 V VDS = --9.6 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --3.1 A Drain-Source On-State Resistancea rDS(on) DS(on) VGS = --2.5 V, ID = --2.5 A VGS = --1.8 V, ID = --1.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --5 V, ID = --3.1 A IS = --0.9 A, VGS = 0 V --10 0.070 0.100 0.131 8 --0.8 --1.2 0.086 0.127 0.164 S V Ω --0.45 100 --1 --5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = --0.9 A, di/dt = 100 A/ms VDD = -- 6 V, RL = 6 Ω --6 ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω VDS = --6 V, VGS = --4.5 V, ID = --3.1 A 5.7 1.2 1.2 10 20 31 26 40 15 30 45 40 60 ns 9 nC
Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10 VGS = 5 thru 2.5 V 8 I D -- Drain Current (A) I D -- Drain Current (A) 2V 6
10
Transfer Characteristics
TC = --55_C
8
25_C
6 125_C 4
4 1.5 V 2 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
2
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS -- Drain-to-Source Voltage (V) www.vishay.com
VGS -- Gate-to-Source Voltage (V) Document Number: 71320 S-21251—Rev. B, 05-Aug-02
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Si5975DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30 r DS(on) -- On-Resistance ( Ω ) 0.25 C -- Capacitance (pF) 0.20 VGS = 1.8 V 0.15 VGS = 2.5 V 0.10 0.05 0.00 0 2 4 6 8 10 VGS = 4.5 V 200 Crss 0 0 3 6 9 12 1000
Capacitance
800
Ciss
600
400 Coss
ID -- Drain Current (A)
VDS -- Drain-to-Source Voltage (V)
Gate Charge
5 V GS -- Gate-to-Source Voltage (V) VDS = 6 V ID = 3.1 A 4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 3.1 A 1.4
3
r DS(on) -- On-Resistance (Ω ) (Normalized) 2 3 4 5 6
1.2
2
1.0
1
0.8
0 0 1 Qg -- Total Gate Charge (nC)
0.6 --50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 0.25
On-Resistance vs. Gate-to-Source Voltage
I S -- Source Current (A)
10
r DS(on) -- On-Resistance ( Ω )
0.20
ID = 3.1 A
TJ = 150_C
0.15
0.10
TJ = 25_C
0.05
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V)
Document Number: 71320 S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-3
Si5975DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.25 50
Single Pulse Power
0.15 V GS(th) Variance (V) Power (W)
40
ID = 1 mA 0.05
30
20
--0.05
10
--0.15 --50
--25
0
25
50
75
100
125
150
0 10 --4
10 --3
10 --2
10 --1 Time (sec)
1
10
100
600
TJ -- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W
t1 t2
Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
2-4
Document Number: 71320 S-21251—Rev. B, 05-Aug-02
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