SI6404DQ

Si6404DQ New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = 10 V 30 0.010 @ VGS = 4.5 V 0.014 @ VGS = 2.5 V FEATURES ID (A) 11 10 8.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D 30-V VDS APPLICATIONS D Battery Switch D Charger Switch D TSSOP-8 D S S G 1 2 3 4 Top View S* N-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6404DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "12 11 Steady State Unit V 8.6 6.9 30 A 0.95 1.08 0.69 –55 to 150 W _C ID IDM IS PD TJ, Tstg 8.9 1.5 1.75 1.14 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71440 S-03483—Rev. A, 16-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 55 95 35 Maximum 70 115 45 Unit _C/W 1 Si6404DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 11 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 10 A VGS = 2.5 V, ID = 8.8 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 11 A IS = 1.5 A, VGS = 0 V 20 0.0073 0.0084 0.0116 27 0.72 1.1 0.009 0.010 0.014 W W S V 0.6 "100 1 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 11 A 32 8.1 10 7.5 35 35 100 50 40 55 55 150 75 85 ns W 48 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 3 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 30 Transfer Characteristics 18 2V 12 18 12 TC = 125_C 6 25_C –55_C 1.5 2.0 2.5 6 0 0 2 4 6 8 10 0 0.0 0.5 1.0 VDS – Drain-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71440 S-03483—Rev. A, 16-Apr-01 2 Si6404DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 r DS(on) – On-Resistance ( W ) VGS = 2.5 V C – Capacitance (pF) 6000 Vishay Siliconix Capacitance 0.012 5000 4000 Ciss 0.009 VGS = 4.5 V 3000 0.006 VGS = 10 V 2000 Coss Crss 0 6 12 18 24 30 0.003 1000 0.000 0 6 12 18 24 30 0 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 11 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 11 A r DS(on) – On-Resistance (W ) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 15 30 45 60 75 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.05 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) TJ = 150_C 10 r DS(on) – On-Resistance ( W ) 0.04 0.03 ID = 11 A 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71440 S-03483—Rev. A, 16-Apr-01 www.vishay.com 3 Si6404DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 60 Single Pulse Power, Junction-to-Ambient 0.2 ID = 250 mA V GS(th) Variance (V) –0.0 Power (W) 50 40 –0.2 30 –0.4 20 –0.6 10 –0.8 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 Time (sec) 10 100 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 95_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71440 S-03483—Rev. A, 16-Apr-01