SI6433BDQ_08

Si6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.040 at VGS = - 4.5 V 0.070 at VGS = - 2.5 V ID (A) - 4.8 - 3.6 FEATURES • Halogen-free RoHS COMPLIANT S* TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8D 7S 6S 5D D P-Channel MOSFET G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.35 1.5 1.0 - 55 to 150 - 4.8 - 3.9 - 20 - 0.95 1.05 0.67 W °C 10 s ±8 - 4.0 - 3.2 A Steady State - 12 Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 65 100 43 Maximum 83 120 52 °C/W Unit Document Number: 72511 S-80682-Rev. C, 31-Mar-08 www.vishay.com 1 Si6433BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.35 A, di/dt = 100 A/µs VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω f = 1 MHz VDS = - 6 V, VGS = - 4.5 V, ID = - 4.8 A 10 1.8 3 7.7 45 60 70 35 65 70 90 110 55 ns Ω 15 nC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 70 °C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.8 A VGS = - 2.5 V, ID = - 3.6 A VDS = - 5 V, ID = - 4.8 A IS = - 1.35 A, VGS = 0 V Min. - 0.6 Typ. Max. - 1.5 ± 100 -1 - 25 Unit V nA µA A - 20 0.032 0.053 14 - 0.77 - 1.1 0.040 0.070 Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 VGS = 4.5 thru 3 V 16 16 I D - Drain Current (A) 20 I D - Drain Current (A) 2.5 V 12 12 8 2V 4 8 TC = 125 °C 25 °C - 55 °C 4 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72511 S-80682-Rev. C, 31-Mar-08 Si6433BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 1500 0.08 C - Capacitance (pF) V GS = 2.5 V 0.06 1200 Ciss 900 RDS(on) - 0.04 VGS = 4.5 V 600 Coss 0.02 300 Crss 0.00 0 4 8 12 16 20 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 4.8 A 1.4 R DS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V ID = 4.8 A Capacitance 5 4 1.2 3 1.0 2 0.8 1 0.6 - 50 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge 0.15 On-Resistance vs. Junction Temperature 10 TJ = 150 °C TJ = 25 °C 1 R DS(on) - On-Resistance (Ω) 0.12 I S - Source Current (A) 0.09 ID = 4.8 A 0.06 0.03 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72511 S-80682-Rev. C, 31-Mar-08 www.vishay.com 3 Si6433BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 0.3 V GS(th) Variance (V) 40 ID = 250 µA Power (W) 30 0.2 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient 10 ID - Drain Current (A) Limited by R DS(on)* 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TC = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 °C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72511 S-80682-Rev. C, 31-Mar-08 Si6433BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72511. Document Number: 72511 S-80682-Rev. C, 31-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1