SI6435ADQ

Si6435ADQ New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.030 @ VGS = –10 V 0.055 @ VGS = –4.5 V ID (A) "5.5 "4.1 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D S S D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6435ADQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs –30 "20 "5.5 "4.5 "30 –1.35 1.5 1.0 Steady State Unit V "4.7 "3.7 A –0.95 1.05 0.67 –55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71104 S-99421—Rev. A, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 65 100 43 Maximum 83 120 52 Unit _C/W 2-1 Si6435ADQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –24 V, VGS = 0 V VDS = –24 V, VGS = 0 V, TJ = 70_C VDS –5 V, VGS = –10 V VDS –5 V, VGS = –4.5 V VGS = –10 V, ID = –5.5 A rDS( ) DS(on) gfs VSD VGS = –4.5 V, ID = –4.1 A VDS = –15 V, ID = –5.5 A IS = –1.3 A, VGS = 0 V –30 A –7 0.024 0.042 12 –0.8 –1.1 0.030 0.055 W S V –1.0 "100 –1 –10 V nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta Drain Current ID(on) Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.3 A, di/dt = 100 A/ms VDD = –15 V, RL = 15 W V, 15 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –15 V VGS = –5 V ID = –5.5 A V, V, 55 15 5.7 5.0 12 10 42 17 40 20 20 60 25 80 ns 20 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 30 Transfer Characteristics 18 4V 18 12 12 TC = 125_C 25_C 0 –55_C 3 4 5 6 2V 0 0 2 4 6 8 10 3V 6 0 1 2 VDS – Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS – Gate-to-Source Voltage (V) Document Number: 71104 S-99421—Rev. A, 29-Nov-99 2-2 Si6435ADQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) – On-Resistance ( W ) 2500 Vishay Siliconix Capacitance 0.09 C – Capacitance (pF) 0.12 2000 Ciss 1500 0.06 VGS = 4.5 V VGS = 10 V 0.03 1000 Coss 500 Crss 0 0 6 12 18 24 30 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 5.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.5 A 1.4 6 r DS(on) – On-Resistance (W) (Normalized) 12 18 24 30 1.2 4 1.0 2 0.8 0 0 6 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) TJ = 150_C I S – Source Current (A) 10 0.15 ID = 5.5 A 0.10 TJ = 25_C 0.05 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Document Number: 71104 S-99421—Rev. A, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 2-3