SI6441DQ

Si6441DQ New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFET ID (A) -8 - 6.4 rDS(on) (W) 0.015 @ VGS = - 10 V 0.024 @ VGS = - 4.5 V APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: Si6441DQ-T1 D P-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6441DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs - 30 "20 -8 Steady State Unit V - 6.3 - 5.0 - 30 A - 01.0 1.08 0.69 - 55 to 150 W _C ID IDM IS PD TJ, Tstg - 6.4 - 1.6 1.75 1.14 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72213 S-03984—Rev. A, 19-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 55 95 38 Maximum 70 115 50 Unit _C/W 1 Si6441DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 55_C VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 8 A VGS = - 4.5 V, ID = - 6.4 A VDS = - 15 V, ID = - 8 A IS = - 1.6 A, VGS = 0 V - 20 0.012 0.019 25 - 0.75 - 1.1 0.015 0.024 W S V -1 -3 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.6 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 5 V, ID = - 8 A 27 7.0 12.8 15 13 95 56 60 25 25 150 90 100 ns 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 3V 6 12 TC = 125_C 6 25_C - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72213 S-03984—Rev. A, 19-May-03 2 Si6441DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 3500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.020 VGS = 4.5 V 2800 Ciss 2100 0.015 VGS = 10 V 0.010 1400 Coss Crss 0.005 700 0.000 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 8 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8 A 1.4 4 r DS(on) - On-Resistance (W ) (Normalized) 14 21 28 35 5 1.2 3 1.0 2 1 0.8 0 0 7 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 TJ = 150_C I S - Source Current (A) 10 0.080 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.064 0.048 ID = 8 A 1 TJ = 25_C 0.032 0.016 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72213 S-03984—Rev. A, 19-May-03 www.vishay.com 3 Si6441DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 60 Single Pulse Power, Junction-to-Ambient 0.6 V GS(th) Variance (V) 50 0.4 Power (W) ID = 250 mA 40 0.2 30 0.0 20 - 0.2 10 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72213 S-03984—Rev. A, 19-May-03 Si6441DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72213 S-03984—Rev. A, 19-May-03 www.vishay.com 5