SI6473DQ

Si6473DQ New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0125 @ VGS = –4.5 V –20 20 0.016 @ VGS = –2.5 V 0.0215 @ VGS = –1.8 V ID (A) –9.5 –8.5 –7.3 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D S S D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6473DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs –20 "8 –9.5 –5.9 –30 –1.5 1.75 1.14 Steady State Unit V –6.2 –4.9 A –0.95 1.08 0.69 –55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71164 S-01042—Rev. B, 15-May-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 55 95 35 Maximum 70 115 45 Unit _C/W 2-1 Si6473DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 70_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –9.5 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = –2.5 V, ID = –8.5 A VGS = –1.8 V, ID = –7.5 A Forward Transconductancea gfs VSD VDS = –15 V, ID = –9.5 A IS = –1.5 A, VGS = 0 V 20 0.010 0.013 0.0175 45 –0.64 –1.1 0.0125 0.016 0.0215 W W S V –0.45 "100 –1 –10 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.5 A, di/dt = 100 A/ms VDD = –10 V, RL = 15 W V, 15 ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –10 V VGS = –5 V ID = –9.5 A V, V, 95 47.5 7.6 7.6 42 33 220 95 50 60 50 330 140 80 ns 70 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D – Drain Current (A) I D – Drain Current (A) 1.5 V 18 24 30 Transfer Characteristics 18 12 12 TC = 125_C 6 25_C 0 6 1V 0 0 3 6 9 12 –55_C 1.0 1.5 2.0 0 0.5 VDS – Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS – Gate-to-Source Voltage (V) Document Number: 71164 S-01042—Rev. B, 15-May-00 2-2 Si6473DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) – On-Resistance ( W ) 10000 Vishay Siliconix Capacitance 0.025 C – Capacitance (pF) 8000 Ciss 6000 0.020 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 0.015 4000 Coss 0.010 0.005 2000 Crss 0 3 0 0 6 12 18 24 30 0 6 9 12 15 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 9.5 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 9.5 A 1.4 3 r DS(on) – On-Resistance (W) (Normalized) 20 30 40 50 1.2 2 1.0 1 0.8 0 0 10 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.04 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) TJ = 150_C 10 r DS(on) – On-Resistance ( W ) 0.03 ID = 9.5 A 0.02 TJ = 25_C 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 2 4 6 8 VGS – Gate-to-Source Voltage (V) Document Number: 71164 S-01042—Rev. B, 15-May-00 www.vishay.com S FaxBack 408-970-5600 2-3 Si6473DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 60 Single Pulse Power, Junction-to-Ambient 50 0.2 V GS(th) Variance (V) Power (W) ID = 250 mA 0.0 40 30 20 –0.2 10 –0.4 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 Time (sec) 10 100 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 95_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71164 S-01042—Rev. B, 15-May-00