SI6542DQ

Si6542DQ Vishay Siliconix Dual N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.09 @ VGS = 10 V 0.175 @ VGS = 4.5 V ID (A) "2.5 "1.8 "1.9 "1.3 P-Channel –20 0.17 @ VGS = –10 V 0.32 @ VGS = –4.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6542DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS N-Channel 20 "20 "2.5 "2.0 "20 1.25 1.0 P-Channel –20 "20 "1.9 "1.5 "15 –1.25 Unit V A W 0.64 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70171 S-00873—Rev. F, 01-May-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 125 Unit _C/W 2-1 Si6542DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current Z Gate Voltage Drain Current l i IDSS VDS = –20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = –20 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta Drain Current ID(on) VDS = 5 V, VGS = 10 V VDS = –5 V, VGS = –10 V VGS = 10 V, ID = 2.5 A Drain-Source On-State Resistance S Drain-Source On-State Resistancea rDS(on) VGS = –10 V, ID = 1.9 A VGS = 4.5 V, ID = 1.8 A VGS = –4.5 V, ID = 1.3 A Forward Transconductancea Transconductance gfs VDS = 15 V, ID = 2.5 A VDS = –15 V, ID = – 1.9 A IS = 1.25 A, VGS = 0 V IS = –1.25 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 14 A –10 0.065 0.13 0.100 0.26 5 S 3 0.8 0.8 1.2 V –1.2 0.09 0.17 0.175 0.32 W N-Ch P-Ch 1.0 V –1.0 "100 1 –1 25 –25 mA nA Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Forward Voltage VSD Dynamicb N-Ch Total Gate Charge Total Gate Charge Qg N-Channel N Ch Channel l VDS = 10 V, VGS = 10 V, ID = 2.5 A P-Channel VDS = –10 V VGS = –10 V ID = –1.9 A V, V, 19 Gate-Drain Charge Charge Qgd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time Delay Time td(on) N-Channel N Ch l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –10 V RL = 10 W V, 10 ID ^ –1 A, VGEN = –10 V, RG = 6 W 10 A, P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Time tf IF = 1.25 A, di/dt = 100 A/ms IF = –1.25 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 7 7 0.9 nC C 1.3 2.1 1.7 11 9 11 12 16 17 6 6 45 35 20 20 20 25 30 ns 30 15 15 70 70 10 10 Gate-Source Charge Charge Qgs Rise Time Time tr Turn-Off Delay Time Delay Time td(off) Source-Drain Reverse Recovery Time Reverse Recovery Time trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70171 S-00873—Rev. F, 01-May-00 Si6542DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 6V 16 I D – Drain Current (A) 16 I D – Drain Current (A) TC = –55_C 25_C 12 125_C 20 N CHANNEL Transfer Characteristics VGS = 10, 9 ,8 ,7 V 5V 12 8 4V 4 3V 0 0 1 2 3 4 5 8 4 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1000 Capacitance 0.25 r DS(on) – On-Resistance ( Ω ) C – Capacitance (pF) VGS = 4.5 V 800 0.20 600 Ciss 400 Coss 200 Crss 0 0.15 0.10 VGS = 10 V 0.05 0 0 2 4 6 8 10 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VGS = 10 V ID = 2.5 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( Ω ) (Normalized) 0 1 2 3 4 5 6 7 8 8 1.5 6 1.0 4 0.5 2 0 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70171 S-00873—Rev. F, 01-May-00 www.vishay.com S FaxBack 408-970-5600 2-3 Si6542DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S – Source Current (A) 10 r DS(on) – On-Resistance ( Ω ) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.00 0 2 4 6 8 10 ID = 2.5 A N CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 25_C VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 1.0 120 Single Pulse Power 100 0.5 V GS(th) Variance (V) 80 Power (W) ID = 250 µA 0.0 60 40 –0.5 20 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.001 0.010 0.100 Time (sec) 1.000 10.000 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 0.02 Single Pulse 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70171 S-00873—Rev. F, 01-May-00 Si6542DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10, 9 V 12 I D – Drain Current (A) 7V 8V 6V 5V 6 I D – Drain Current (A) 12 25_C 9 15 TC = –55_C 125_C P CHANNEL Transfer Characteristics 9 6 3 4V 3V 3 0 0 1 2 3 4 5 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 1000 Capacitance r DS(on) – On-Resistance ( Ω ) 0.4 VGS = 4.5 V C – Capacitance (pF) 800 Ciss 600 0.3 0.2 VGS = 10 V 0.1 400 Coss 200 Crss 0 0 2 4 6 8 10 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VGS = 10 V ID = 1.9 A Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( Ω ) (Normalized) 8 1.5 VGS = 10 V ID = 1.9 A 6 1.0 4 0.5 2 0 0 2 4 6 8 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70171 S-00873—Rev. F, 01-May-00 www.vishay.com S FaxBack 408-970-5600 2-5 Si6542DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.7 0.6 r DS(on) – On-Resistance ( Ω ) 0.5 0.4 0.3 0.2 0.1 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 P CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 150_C I S – Source Current (A) 10 TJ = 25_C ID = 1.9 A VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 1.0 ID = 250 µA 0.5 V GS(th) Variance (V) 80 Power (W) 120 Single Pulse Power 100 0.0 60 40 –0.5 20 –1.0 –50 –25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 Time (sec) 1.000 10.000 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 0.02 Single Pulse 0.01 10–4 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70171 S-00873—Rev. F, 01-May-00