SI6562DQ

Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V ID (A) "4.5 "3.9 "3.5 "2.7 P-Channel –20 0.050 @ VGS = –4.5 V 0.085 @ VGS = –2.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 Si6562DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "4.5 "3.6 "30 1.25 1.0 P-Channel –20 "12 "3.5 "2.7 "30 –1.25 Unit V A W 0.64 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70720 S-56944—Rev. B, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 125 Unit _C/W 2-1 Si6562DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current Z Gate Voltage Drain Current l i IDSS VDS = –20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = –20 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta Drain Current ID(on) VDS w 5 V, VGS = 4.5 V VDS w –5 V, VGS = –4.5 V VGS = 4.5 V, ID = 4.5 A D i -Source On-State Resistance S i Drain S Drain-Source On-State Resistancea rDS(on) DS(on) VGS = –4.5 V, ID = –3.5 A VGS = 2.5 V, ID = 3.9 A VGS = –2.5 V, ID = –2.7 A Forward Transconductancea Transconductance gfs VDS = 10 V, ID = 4.5 A VDS = –10 V, ID = –3.5 A IS = 1.25 A, VGS = 0 V IS = –1.25 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 A –30 0.023 0.040 0.030 0.060 20 S 10 0.65 0.72 1.2 V –1.2 0.030 0.050 0.040 0.085 W 0.6 V –0.6 "100 "100 1 –1 25 –25 mA nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage Leakage IGSS Diode Forward Voltagea Forward Voltage VSD Dynamicb N-Ch Total Gate Charge Total Gate Charge Qg N-Channel N Ch l Channel VDS = 15 V, VGS = 4.5 V, ID = 4.5 A P-Channel VDS = –15 V VGS = –4.5 V, ID = –3 5 A V, 45V 3.5 Gate-Drain Charge Charge Qgd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time Delay Time td(on) N-Channel N Ch l V, VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –10 V RL = 10 W V, 10 10 ID ^ –1 A, VGEN = –10 V, RG = 6 W A, P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Time Source-Drain Reverse R R Recovery Time Ti tf IF = 1.25 A, di/dt = 100 A/ms IF = –1.25 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 13 14.5 3.0 C nC 3.5 3.3 3.5 22 27 40 30 50 57 20 21 30 60 50 50 80 60 100 ns 100 40 40 60 100 25 25 Gate-Source Charge Charge Qgs Rise Time Time tr Turn-Off Delay Time Delay Time td(off) trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70720 S-56944—Rev. B, 23-Nov-98 Si6562DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 3 V 2.5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 30 N-CHANNEL Transfer Characteristics 18 18 12 2V 12 TC = 125_C 6 25_C –55_C 0 6 1.5 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.08 2100 1800 r DS(on)– On-Resistance ( W ) C – Capacitance (pF) 0.06 Capacitance Ciss 1500 1200 900 600 300 Crss 0.04 VGS = 2.5 V VGS = 4.5 V 0.02 Coss 0 0 6 12 18 24 30 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 4.5 VDS = 10 V ID = 4.5 A Gate Charge 1.8 1.6 r DS(on)– On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 –50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.5 A V GS – Gate-to-Source Voltage (V) 3.6 2.7 1.8 0.9 0 0 3 6 9 12 15 Qg – Total Gate Charge (nC) –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 70720 S-56944—Rev. B, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si6562DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.10 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) 10 r DS(on)– On-Resistance ( W ) 0.08 ID = 4.5 A 0.06 TJ = 150_C 0.04 TJ = 25_C 0.02 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) 0.4 Threshold Voltage 40 ID = 250 mA Single Pulse Power 0.2 V GS(th) Variance (V) 32 Power (W) –0.0 24 –0.2 16 –0.4 8 –0.6 –50 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70720 S-56944—Rev. B, 23-Nov-98 Si6562DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 3V 24 I D – Drain Current (A) VGS = 5, 4.5, 4, 3,5 V 2.5 V 18 I D – Drain Current (A) 16 20 P-CHANNEL Transfer Characteristics 12 12 2V 6 1.5 V 0 0 2 4 6 8 10 8 TC = 125_C 4 25_C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –55_C VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 2500 Ciss r DS(on)– On-Resistance ( W ) 0.16 C – Capacitance (pF) 2000 Capacitance 0.12 VGS = 2.5 V 1500 0.08 VGS = 4.5 V 1000 0.04 500 Crss 0 4 8 Coss 0 0 6 12 18 24 30 0 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 VDS = 10 V ID = 3.5 A 1.8 1.6 r DS(on)– On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 –50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.5 A V GS – Gate-to-Source Voltage (V) 3.6 2.7 1.8 0.9 0 0 3 6 9 12 15 Qg – Total Gate Charge (nC) –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 70720 S-56944—Rev. B, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-5 Si6562DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.20 P-CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 150_C r DS(on)– On-Resistance ( W ) 10 I S – Source Current (A) 0.16 0.12 TJ = 25_C 0.08 ID = 4.5 A 0.04 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0.8 0.6 0.4 V GS(th) Variance (V) 0.2 –0.0 –0.2 –0.4 –0.6 –50 Threshold Voltage 40 ID = 250 mA 30 Single Pulse Power Power (W) 20 10 0 –25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70720 S-56944—Rev. B, 23-Nov-98