SI6880AEDQ

Si6880AEDQ New Product Vishay Siliconix N-Channel 1.8-V (G-S) Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.018 at VGS = 4.5 V 20 0.022 at VGS = 2.5 V 0.025 at VGS = 1.8 V ID (A) 7.2 6.5 6.0 FEATURES • TrenchFET® Power MOSFET • ESD Protected: 3500 V • Common Drain Pb-free Available RoHS* COMPLIANT APPLICATIONS • 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6880AEDQ-T1 Si6880AEDQ-T1-E3 (Lead (Pb)-free) 8D 7 S2 6 S2 5 G2 G1 Si6880AEDQ * 2.3 kΩ G2 * 2.3 kΩ S1 N-Channel * Typical value by design N-Channel S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.5 1.5 0.96 - 55 to 150 7.2 5.7 30 1.0 1.0 0.64 W °C 10 sec 20 ± 12 5.8 4.7 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 Board. b. t ≤ 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72313 S-60422-Rev. B, 20-Mar-06 www.vishay.com 1 a Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF Typical 70 100 55 Maximum 83 120 70 Unit °C/W Si6880AEDQ Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω VDS = 10 V, VGS = 4.5 V, ID = 7.2 A 22 2 3.6 1.0 1.6 6 5.5 1.5 2.5 10 10 ns 35 nC a Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 7.2 A VGS = 2.5 V, ID = 6.5 A VGS = 1.8 V, ID = 6.0 A VDS = 10 V, ID = 7.2 A IS = 1.5 A, VGS = 0 V Min 0.40 Typ Max 0.90 ±1 ± 10 1 25 Unit V µA mA µA A 20 0.014 0.016 0.018 45 0.61 1.1 0.018 0.022 0.025 Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 1.5 V 18 24 30 18 12 12 TC = 125 °C 6 25 °C - 55 °C 6 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72313 S-60422-Rev. B, 20-Mar-06 Si6880AEDQ New Product TYPICAL CHARACTERISTICS 25 °C unless noted 0.030 5 VDS = 10 V ID = 7.2 A Vishay Siliconix V GS - Gate-to-Source Voltage (V) 0.024 r DS(on) - On-Resistance (Ω) VGS = 1.8 V 0.018 VGS = 2.5 V VGS = 4.5 V 0.012 4 3 2 0.006 1 0.000 0 6 12 18 24 30 0 0 5 10 15 20 25 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current 1.6 VGS = 4.5 V ID = 7.2 A I S - Source Current (A) 10 30 Gate Charge 1.4 r DS(on) - On-Resistance (Normalized) TJ = 150 °C 1.2 1.0 TJ = 25 °C 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.060 0.4 Source-Drain Diode Forward Voltage 0.048 r DS(on) - On-Resistance (Ω) V GS(th) Variance (V) ID = 7.2 A 0.036 0.2 ID = 250 µA 0.0 0.024 - 0.2 0.012 - 0.4 0.000 0 1 2 3 4 5 6 7 8 - 0.6 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Document Number: 72313 S-60422-Rev. B, 20-Mar-06 www.vishay.com 3 Si6880AEDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 150 100 Limited by rDS(on) 120 10 90 I D - Drain Current (A) 1 ms Power (W) 1 10 ms 100 ms 60 30 0.1 TC = 25 °C Single Pulse 1s 10 s dc 0 0.001 0.01 0.1 Time (sec) 1 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Single Pulse Power 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Safe Operating Area, Junction-to-Case 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 100 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72313. www.vishay.com 4 Document Number: 72313 S-60422-Rev. B, 20-Mar-06