SI6925ADQ

SPICE Device Model Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72663 23-May-04 www.vishay.com 1 SPICE Device Model Si6925ADQ Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Conditions Simulated Data 1.1 80 0.036 0.043 0.052 15 0.78 Measured Data Unit VGS(th) ID(on) VDS = VGS, ID = 250 µA VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.9 A V A 0.035 0.042 0.050 14 0.75 S V Ω Drain-Source On-State Resistancea rDS(on) VGS = 3 V, ID = 3.5 A VGS = 2.5 V, ID = 3 A Forward Transconductancea Forward Voltage a gfs VSD VDS = 10 V, ID = 3.9 A IS = 1 A, VGS = 0 V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 6 V, RL = 6 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω VDS = 6 V, VGS = 4.5 V, ID = 3.9 A 4 0.90 1 52 28 25 8 4 0.90 1 40 50 20 10 ns nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72663 23-May-04 SPICE Device Model Si6925ADQ Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED) Document Number: 72663 23-May-04 www.vishay.com 3