SI6943BDQ

Si6943BDQ New Product Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) 0.08 @ VGS = -4.5 V 0.105 @ VGS = -2.5 V ID (A) -2.5 - 1.9 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6943BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 2.5 Steady State Unit V -2.3 -1.8 -20 A -0.7 0.80 0.50 -55 to 150 W _C ID IDM IS PD TJ, Tstg -2.2 -1.0 1.10 0.70 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72016 S-21780—Rev. A, 07-Oct-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 89 120 70 Maximum 110 150 90 Unit _C/W 1 Si6943BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -2.5 A VGS = -2.5 V, ID = -1.9 A VDS = -15 V, ID = -2.5 A IS = -1.0 A, VGS = 0 V -10 0.06 0.08 8 -0.75 -1.2 0.08 0.105 W S V -0.45 -0.8 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.0 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1.0 A, VGEN = -4.5 V, RG = 6 W VDS = -6 V, VGS = -4.5 V, ID = -2.5 A 5.7 0.8 1.6 15 35 35 30 30 25 60 60 50 60 ns 10 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 12 3V 16 20 Transfer Characteristics TC = -55_C 25_C 125_C 12 8 2V 8 4 1.5 V 0 0 1 2 3 4 5 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72016 S-21780—Rev. A, 07-Oct-02 2 Si6943BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 1000 Vishay Siliconix Capacitance 0.09 VGS = 2.5 V VGS = 4.5 V C - Capacitance (pF) 0.12 800 600 Ciss 0.06 400 Coss 0.03 200 Crss 0.00 0 3 6 9 12 15 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 2.5 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.5 A 1.4 3 r DS(on) - On-Resistance (W ) (Normalized) 2.6 3.9 5.2 6.5 1.2 2 1.0 1 0.8 0 0.0 1.3 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.16 0.12 ID = 2.5 A 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72016 S-21780—Rev. A, 07-Oct-02 www.vishay.com 3 Si6943BDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 60 Single Pulse Power, Junction-to-Ambient 48 0.2 V GS(th) Variance (V) Power (W) ID = 250 mA 0.0 36 24 -0.2 12 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 10 I D - Drain Current (A) Limited by rDS(on) 1 ms 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 1 Square Wave Pulse Duration (sec) 10- 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72016 S-21780—Rev. A, 07-Oct-02 Si6943BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72016 S-21780—Rev. A, 07-Oct-02 www.vishay.com 5