Si6954DQ
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.065 @ VGS = 10 V 0.095 @ VGS = 4.5 V
ID (A)
"3.9 "3.1
D1
D2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 7 6 5
Si6954DQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg
Symbol
VDS VGS
Limit
30 "20 "3.9 "3.1 "20
Unit
V
A
1.25
1.0 W 0.64 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70179 S-49534—Rev. C, 06-Oct-97 www.vishay.com S FaxBack 408-970-5600
Symbol
RthJA
Limit
125
Unit
_C/W
2-1
Si6954DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.9 A VGS = 4.5 V, ID = 3.1 A VDS = 15 V, ID = 3.9 A IS = 1.25 A, VGS = 0 V 15 0.043 0.075 7.0 0.77 1.2 0.065 0.095 W S V 1.0 "100 1 25 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W 10 V, 10 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, VDS = 10 V, VGS = 10 V ID = 3.9 A 10 V 10 V, 9 9.8 2.1 1.6 9 6 18 6 48 15 12 27 12 80 ns 15 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70179 S-49534—Rev. C, 06-Oct-97
Si6954DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 6 V 5V 16 I D – Drain Current (A) I D – Drain Current (A) 16 20 TC = –55_C 25_C
Transfer Characteristics
12
12
125_C
8
4V
8
4 3V 0 0 2 4 6 8
4
0 0 1 2 3 4 5 6
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20 750
Capacitance
r DS(on)– On-Resistance ( W )
0.16 C – Capacitance (pF) VGS = 4.5 V 0.12
600
Ciss
450
0.08 VGS = 10 V 0.04
300
Coss
150 Crss
0 0 4 8 12 16 20
0 0 5 10 15 20 25 30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
10 VDS = 10 V ID = 3.9 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
r DS(on)– On-Resistance ( W ) (Normalized)
8
1.6
VGS = 10 V ID = 3.9 A
6
1.2
4
0.8
2
0 0 2 4 6 8 10
0.4 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600
Document Number: 70179 S-49534—Rev. C, 06-Oct-97
2-3
Si6954DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20 TJ = 150_C 10 TJ = 25_C r DS(on)– On-Resistance ( W ) 0.16 0.20
On-Resistance vs. Gate-to-Source Voltage
I S – Source Current (A)
0.12 ID = 3.9 A 0.08
0.04
0 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4 0.2 –0.0 20 –0.2 –0.4 –0.6 –0.8 –1.0 –50 Power (W) ID = 250 mA 30
Single Pulse Power
25
V GS(th) Variance (V)
15
10
5
–25
0
25
50
75
100
125
150
0 0.01 0.1 1 Time (sec) 10 30
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
PDM t1 t2 1. Duty Cycle, D = t1 t2
0.02
2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse 0.01 10–4 10–3 10–2 10–1 1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70179 S-49534—Rev. C, 06-Oct-97
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