SI6954DQ

Si6954DQ Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.065 @ VGS = 10 V 0.095 @ VGS = 4.5 V ID (A) "3.9 "3.1 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 7 6 5 Si6954DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit 30 "20 "3.9 "3.1 "20 Unit V A 1.25 1.0 W 0.64 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70179 S-49534—Rev. C, 06-Oct-97 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 125 Unit _C/W 2-1 Si6954DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.9 A VGS = 4.5 V, ID = 3.1 A VDS = 15 V, ID = 3.9 A IS = 1.25 A, VGS = 0 V 15 0.043 0.075 7.0 0.77 1.2 0.065 0.095 W S V 1.0 "100 1 25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W 10 V, 10 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, VDS = 10 V, VGS = 10 V ID = 3.9 A 10 V 10 V, 9 9.8 2.1 1.6 9 6 18 6 48 15 12 27 12 80 ns 15 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70179 S-49534—Rev. C, 06-Oct-97 Si6954DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6 V 5V 16 I D – Drain Current (A) I D – Drain Current (A) 16 20 TC = –55_C 25_C Transfer Characteristics 12 12 125_C 8 4V 8 4 3V 0 0 2 4 6 8 4 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 750 Capacitance r DS(on)– On-Resistance ( W ) 0.16 C – Capacitance (pF) VGS = 4.5 V 0.12 600 Ciss 450 0.08 VGS = 10 V 0.04 300 Coss 150 Crss 0 0 4 8 12 16 20 0 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 10 V ID = 3.9 A Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 8 1.6 VGS = 10 V ID = 3.9 A 6 1.2 4 0.8 2 0 0 2 4 6 8 10 0.4 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70179 S-49534—Rev. C, 06-Oct-97 2-3 Si6954DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 TJ = 25_C r DS(on)– On-Resistance ( W ) 0.16 0.20 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) 0.12 ID = 3.9 A 0.08 0.04 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 –0.0 20 –0.2 –0.4 –0.6 –0.8 –1.0 –50 Power (W) ID = 250 mA 30 Single Pulse Power 25 V GS(th) Variance (V) 15 10 5 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70179 S-49534—Rev. C, 06-Oct-97