SI6963BDQ

Si6963BDQ New Product Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) 0.045 @ VGS = −4.5 V 0.080 @ VGS = −2.5 V ID (A) −3.9 −3.0 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6963BDQ-T1—E3 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6963BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 sec −20 "12 −3.9 −3.1 −30 −1.0 1.13 0.73 Steady State Unit V −3.4 −2.7 A −0.75 0.83 0.53 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. Document Number: 72772 S-40439—Rev. A, 15-Mar-04 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 90 125 67 Maximum 110 150 80 Unit _C/W 1 Si6963BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 55_C VDS w −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −3.9 A VGS = −2.5 V, ID = −3.0 A VDS = −10 V, ID = −3.9 A IS = −1.0 A, VGS = 0 V −20 0.036 0.065 10 −0.71 −1.1 0.045 0.080 W S V −0.6 −1.4 "100 −1 −10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.0 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −10 V, VGS = −4.5 V, ID = −3.9 A 8.6 1.2 2.8 7.0 33 57 65 40 30 50 90 100 60 50 ns W 11 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20.0 VGS = 5 thru 3 V 16.0 2.5 V I D − Drain Current (A) 12.0 I D − Drain Current (A) 125_C 12.0 16.0 20.0 TC = −55_C 25_C Transfer Characteristics 8.0 2.0 V 4.0 1.5 V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 8.0 4.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 72772 S-40439—Rev. A, 15-Mar-04 2 Si6963BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) − On-Resistance ( W ) 1200.0 1000.0 C − Capacitance (pF) 800.0 600.0 400.0 200.0 Crss 0.00 0.0 4.0 8.0 12.0 16.0 20.0 0.0 0.0 4.0 8.0 12.0 16.0 20.0 Ciss Vishay Siliconix Capacitance 0.12 0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 0.03 Coss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10.0 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 3.9 A 8.0 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.9 A 6.0 1.2 4.0 1.0 2.0 0.8 0.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.08 0.06 ID = 3.9 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 7 8 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72772 S-40439—Rev. A, 15-Mar-04 www.vishay.com 3 Si6963BDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 200 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 160 Power (W) 0.2 120 0.0 80 −0.2 40 −0.4 −50.0 −25.0 0.0 25.0 50.0 75.0 100.0 125.0 150.0 0 10−3 10−2 10−1 Time (sec) 1 10 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 I D − Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 115_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72772 S-40439—Rev. A, 15-Mar-04 Si6963BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72772 S-40439—Rev. A, 15-Mar-04 www.vishay.com 5