SI6965DQ

Si6965DQ Vishay Siliconix P-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.035 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) "5.0 "3.9 S1 S2 TSSOP-8 D S1 S1 G1 1 2 3 4 Top View D P-Channel MOSFET D P-Channel MOSFET D 8 D S2 S2 G2 G1 G2 Si6965DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Drain Current C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Power Dissipationa, Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "12 "5.0 "4.0 "30 –1.5 1.5 0.96 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta t v 10 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70798 S-56943—Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 83 Unit _C/W 85 2-1 Si6965DQ Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS w –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –5.0 A VGS = –2.5 V, ID = –3.9 A VDS = –10 V, ID = –5.0 A IS = –1.5 A, VGS = 0 V –30 0.028 0.043 15 –0.72 –1.2 0.035 0.060 W S V –0.6 "100 –1 –5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.5 A, di/dt = 100 A/ms VDD = –10 V, RL = 10 W V, 10 ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –10 V VGS = –10 V ID = –5.0 A V, V, 50 17.5 4.6 3.4 25 30 110 65 30 50 60 200 120 60 ns 30 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70798 S-56943—Rev. B, 02-Nov-98 Si6965DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 3 V 24 I D – Drain Current (A) I D – Drain Current (A) 2.5 V 18 24 30 Transfer Characteristics 18 12 2V 6 1.5 V 0 0 2 4 6 8 10 12 TC = 125_C 6 25_C 0 0 0.6 1.2 1.8 2.4 3.0 –55_C VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 3000 Capacitance r DS(on) – On-Resistance ( W ) 0.16 C – Capacitance (pF) 2500 Ciss 2000 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 1500 1000 Coss 500 Crss 0 4 8 12 16 20 0 0 6 12 18 24 30 0 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 4.5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 5.0 A Gate Charge 1.8 1.6 1.4 1.2 1.0 0.8 0.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.0 A 3.6 2.7 1.8 0.9 0 0 5 10 15 20 r DS(on) – On-Resistance ( W) (Normalized) 0.4 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70798 S-56943—Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si6965DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.08 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C I S – Source Current (A) 10 r DS(on) – On-Resistance ( W ) 0.06 ID = 5.0 A 0.04 TJ = 25_C 0.02 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.8 0.6 0.4 0.2 –0.0 –0.2 –0.4 –0.6 –50 5 Power (W) ID = 250 mA 30 25 Single Pulse Power V GS(th) Variance (V) 20 15 10 0 –25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70798 S-56943—Rev. B, 02-Nov-98