SI6967DQ

Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.030 @ VGS = –4.5 V 0.045 @ VGS = –2.5 V 0.070 @ VGS = –1.8 V ID (A) "5.0 "4.0 "3.0 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 D2 D 8 D2 S2 S2 G2 G1 G2 Si6967DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Drain Current C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Power Dissipationa, Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –8 "8 "5.0 "4.0 "30 –1.25 1.1 0.72 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta t v 10 sec Steady State Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70811 S-59525—Rev. C, 12-Oct-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 110 Unit _C/W 115 2-1 Si6967DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –6.4 V, VGS = 0 V VDS = –6.4 V, VGS = 0 V, TJ = 70_C VDS w –8 V, VGS = –4.5 V VGS = –4.5 V, ID = –5.0 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = –2.5 V, ID = –4.0 A VGS = –1.8 V, ID = –3.0 A Forward Transconductancea gfs VSD VDS = –8 V, ID = –5.0 A IS = –1.25 A, VGS = 0 V –30 0.024 0.033 0.048 18 –0.68 –1.1 0.030 0.045 0.070 S V W –0.45 "100 –1 –25 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.25 A, di/dt = 100 A/ms VDD = –6 V, RL = 6 W V, ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –6 V, VGS = –4 5 V ID = –5 0 A V 4.5 V, 5.0 20 4.5 3.6 20 30 85 50 50 50 60 150 90 100 ns 40 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70811 S-59525—Rev. C, 12-Oct-98 Si6967DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 30 TC = –55_C 24 I D – Drain Current (A) VGS = 5 thru 2,5 V I D – Drain Current (A) 24 25_C Transfer Characteristics 18 2V 18 125_C 12 12 6 1.5 V 6 1V 0 0 2 4 6 8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 4000 Capacitance r DS(on) – On-Resistance ( W ) 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V VGS = 4.5 V 0.02 C – Capacitance (pF) 3200 Ciss 2400 0.04 1600 Coss 800 Crss 0 0 6 12 18 24 30 0 0 2 4 6 8 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 V GS – Gate-to-Source Voltage (V) VDS = 6 V ID = 5.0 A 1.6 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance (W) (Normalized) 3.6 1.4 VGS = 4.5 V ID = 5.0 A 1.2 2.7 1.0 1.8 0.8 0.9 0.6 0 0 4 8 12 16 20 0.4 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70811 S-59525—Rev. C, 12-Oct-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si6967DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.06 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) – On-Resistance ( W ) TJ = 150_C I S – Source Current (A) 0.05 0.04 ID = 5.0 A 0.03 0.02 TJ = 25_C 0.01 1 0.00 0.2 0.4 0.6 0.8 1..0 1.2 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.8 0.6 0.4 20 0.2 –0.0 –0.2 –0.4 –0.6 –50 5 Power (W) ID = 250 mA 30 25 Single Pulse Power V GS(th) Variance (V) 15 10 0 –25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 115_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70811 S-59525—Rev. C, 12-Oct-98