SI6975DQ

Si6975DQ New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = –4.5 V –12 0.035 @ VGS = –2.5 V 0.046 @ VGS = –1.8 V ID (A) –5.1 –4.5 –3.9 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6975DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs –12 "8 –5.1 Steady State Unit V –4.3 –3.5 –30 A –0.7 0.83 0.53 –55 to 150 W _C ID IDM IS PD TJ, Tstg –4.1 –1.0 1.14 0.73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71319 S-02318—Rev. A, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 86 124 52 Maximum 110 150 65 Unit _C/W 1 Si6975DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –5 mA VDS = 0 V, VGS = "8 V VDS = –9.6 V, VGS = 0 V VDS = –9.6 V, VGS = 0 V, TJ = 70_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –5.1 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –4.5 A VGS = –1.8 V, ID = –3.9 A Forward Transconductancea gfs VSD VDS = –5 V, ID = –5.1 A IS = –1.0 A, VGS = 0 V –20 0.022 0.028 0.037 20 –0.65 –1.1 0.027 0.035 0.046 W W S V –0.45 "100 –1 –25 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.0 A, di/dt = 100 A/ms VDD = –6 V, RL = 6 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W VDS = –6 V, VGS = –4.5 V, ID = –5.1 A 23 3.0 4.3 25 32 96 62 60 40 50 140 95 100 ns 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 2V 24 I D – Drain Current (A) I D – Drain Current (A) 24 25_C 18 125_C 12 30 TC = –55_C Transfer Characteristics 18 12 1.5 V 6 0.5, 1 V 0 0 2 4 6 8 10 6 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71319 S-02318—Rev. A, 23-Oct-00 2 Si6975DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) – On-Resistance ( W ) 4000 Vishay Siliconix Capacitance C – Capacitance (pF) 0.08 3200 Ciss 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 2400 1600 Coss 0.02 VGS = 4.5 V 800 Crss 0.00 0 5 10 15 20 25 30 0 0 2 4 6 8 10 12 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 6 V ID = 5.1 A 4 1.60 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.1 A 1.40 3 r DS(on) – On-Resistance (W ) (Normalized) 10 15 20 25 1.20 2 1.00 1 0.80 0 0 5 Qg – Total Gate Charge (nC) 0.60 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) TJ = 150_C 10 TJ = 25_C r DS(on) – On-Resistance ( W ) 0.08 0.06 ID = 5.1 A 0.04 0.02 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71319 S-02318—Rev. A, 23-Oct-00 www.vishay.com 3 Si6975DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 100 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 80 Power (W) 60 0.0 40 –0.2 20 –0.4 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 124_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71319 S-02318—Rev. A, 23-Oct-00