SI6981DQ

Si6981DQ New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.031 @ VGS = - 4.5 V - 20 0.041 @ VGS = - 2.5 V 0.058 @ VGS = - 1.8 V D TrenchFETr Power MOSFETS ID (A) - 4.8 - 4.2 - 3.5 APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6981DQ T-1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs - 20 "8 - 4.8 Steady State Unit V - 4.1 - 3.2 - 30 A - 0.7 0.83 0.53 - 55 to 150 W _C ID IDM IS PD TJ, Tstg - 3.9 - 1.0 1.14 0.73 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72226 S-31065—Rev. A, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 86 124 59 Maximum 110 150 75 Unit _C/W 1 Si6981DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 300 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.8 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 4.2 A VGS = - 1.8 V, ID = - 3.5 A Forward Transconductancea gfs VSD VDS = - 5 V, ID = - 4.8 A IS = - 1.0 A, VGS = 0 V - 20 0.026 0.034 0.046 17 - 0.65 - 1.1 0.031 0.041 0.058 W W S V - 0.40 - 0.9 "100 -1 - 25 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.0 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 4.8 A 15 2.4 3.8 35 55 120 52 30 55 85 180 80 50 ns 25 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 25_C 18 2V 18 125_C 30 TC = - 55_C Transfer Characteristics 12 12 6 1.5 V 6 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72226 S-31065—Rev. A, 26-May-03 2 Si6981DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 C - Capacitance (pF) 0.08 2000 1500 Ciss 1000 Coss 500 Crss 0 4 0.00 0 6 12 18 24 30 0 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 4.8 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.8 A 1.4 4 r DS(on) - On-Resistance (W ) (Normalized) 8 12 16 20 5 1.2 3 1.0 2 1 0.8 0 0 4 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 TJ = 150_C 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 4.8 A 1 TJ = 25_C 0.04 0.02 0.2 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72226 S-31065—Rev. A, 26-May-03 www.vishay.com 3 Si6981DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 160 ID = 300 mA 0.2 Power (W) 120 0.1 80 0.0 40 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 10 I D - Drain Current (A) Limited by rDS(on) 1 ms 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 124_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72226 S-31065—Rev. A, 26-May-03 Si6981DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72226 S-31065—Rev. A, 26-May-03 www.vishay.com 5