SI6993DQ-T1

Si6993DQ New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFETS ID (A) - 4.7 - 3.8 rDS(on) (W) 0.031 @ VGS = - 10 V 0.048 @ VGS = - 4.5 V APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6993DQ -T1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs - 30 "20 - 4.7 - 3.8 - 30 - 1.0 1.14 0.73 Steady State Unit V - 3.6 - 3.2 A - 0.70 0.83 0.53 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72369 S-31912—Rev. A, 15-Sep-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 86 124 52 Maximum 110 150 65 Unit _C/W 1 Si6993DQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55_C VDS w - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 4.7 A VGS = - 4.5 V, ID = - 3.8 A VDS = - 15 V, ID = - 4.7 A IS = - 1.0 A, VGS = 0 V - 15 0.024 0.038 14 - 0.74 - 1.1 0.031 0.048 W S V - 1.0 - 3.0 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.0 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W f = 1.0 MHz VDS = - 15 V, VGS = - 4.5 V, ID = - 4.7 A 13 3 5.8 4.6 13 14 52 26 40 20 22 80 40 60 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) 4V I D - Drain Current (A) 24 30 Transfer Characteristics TC = - 55_C 25_C 125_C 18 18 12 12 6 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72369 S-31912—Rev. A, 15-Sep-03 2 Si6993DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 2000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.08 1600 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 1200 Ciss 800 400 Crss Coss 0.00 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) VDS = 15 V ID = 4.7 A 1.60 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.7 A 1.40 r DS(on) - On-Resistance (W ) (Normalized) 1.20 1.00 0.80 0.60 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.12 0.15 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 1 0.09 ID = 4.7 A 0.06 0.03 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72369 S-31912—Rev. A, 15-Sep-03 www.vishay.com 3 Si6993DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 100 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 80 Power (W) 0.2 60 0.0 40 - 0.2 20 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 124_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72369 S-31912—Rev. A, 15-Sep-03 Si6993DQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72369 S-31912—Rev. A, 15-Sep-03 www.vishay.com 5