SI7106DN

Si7106DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0062 at VGS = 4.5 V 0.0098 at VGS = 2.5 V ID (A) 19.5 15.5 Qg (Typ.) 17.5 nC FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized • 100 % Rg Tested RoHS COMPLIANT PowerPAK 1212-8 APPLICATIONS • Synchronous Rectification 3.30 mm 3.30 mm S 1 2 3 S S D G 4 D 8 7 6 5 D D D G Bottom View S Ordering Information: Si7106DN-T1-E3 (Lead (Pb)-free) Si7106DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) b, c a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS L = 0 1 mH TA = 25 °C TA = 70 °C IAS EAS PD TJ, Tstg 10 s 20 Steady State ± 12 Unit V 19.5 15.6 60 3.2 30 45 3.8 2.0 - 55 to 150 260 12.5 10.0 A 1.3 mJ 1.5 0.8 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 24 65 1.9 Maximum 33 81 2.4 °C/W Unit Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73142 S-81529-Rev. E, 30-Jun-08 www.vishay.com 1 Si7106DN Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.2 A, dI/dt = 100 A/µs VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω f = 1 MHz 0.7 VDS = 10 V, VGS = 4.5 V, ID = 19.5 A 17.5 6.6 2.8 1.4 25 15 50 12 30 2.1 40 25 75 20 60 ns Ω 27 nC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 19.5 A VGS = 2.5 V, ID = 15.5 A VDS = 15 V, ID = 19.5 A IS = 3.2 A, VGS = 0 V Min. 0.6 Typ. Max. 1.5 ± 100 1 5 Unit V nA µA A 40 0.0051 0.0081 105 0.8 1.2 0.0062 0.0098 Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 VGS = 10 thru 2.5 V 48 I D - Drain Current (A) I D - Drain Current (A) 48 60 36 36 24 24 TC = 125 °C 12 25 °C - 55 °C 12 2V 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 73142 S-81529-Rev. E, 30-Jun-08 Si7106DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.016 0.014 R DS(on) - On-Resistance (Ω) 3500 Ciss 2800 C - Capacitance (pF) 0.012 0.010 VGS = 2.5 V 0.008 0.006 0.004 VGS = 4.5 V 2100 1400 700 0.002 0.000 0 10 20 30 40 50 60 Coss Crss 0 5 10 15 20 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 19.5 A R DS(on) - On-Resistance 1.6 VGS = 4.5 V ID = 19.5 A Capacitance VGS - Gate-to-Source Voltage (V) 4 1.4 3 (Normalized) 1.2 2 1.0 1 0.8 0 0 4 8 12 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 60 0.024 On-Resistance vs. Junction Temperature 0.020 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A 0.016 TJ = 150 °C 10 0.012 ID = 19.5 A 0.008 TJ = 25 °C 0.004 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73142 S-81529-Rev. E, 30-Jun-08 www.vishay.com 3 Si7106DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 ID = 250 µA 0.2 V GS(th) Variance (V) 40 50 0.0 Power (W) 30 - 0.2 20 - 0.4 10 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 600 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient IDM Limited P(t) = 0.0001 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 DC 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73142 S-81529-Rev. E, 30-Jun-08 Si7106DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73142. Document Number: 73142 S-81529-Rev. E, 30-Jun-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1