SI7114ADN

New Product Si7114ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0075 at VGS = 10 V 0.0098 at VGS = 4.5 V ID (A)a, g 35 10.2 nC 35 Qg (Typ.) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT PowerPAK® 1212-8 APPLICATIONS • Synchronous Rectification 3.30 mm 3.30 mm S 1 2 3 S S D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7114ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 30 ± 20 35 g 35g 18b, c 14.5b, c 60 30 45 32 3.2b, c 39 25 3.7b, c 2.4b, c - 55 to 150 260 Unit V A mJ A TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 26 2.4 Maximum 34 3.2 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W. g. Package limited. Document Number: 68932 S-82616-Rev. B, 03-Nov-08 www.vishay.com 1 Si7114ADN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 10 A, VGS = 0 V 0.8 24 20 16 8 TC = 25 °C 32 60 1.2 36 30 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.3 VDS = 15 V, VGS = 10 V, ID = 19 A VDS = 15 V, VGS = 4.5 V, ID = 19 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1230 275 105 21 10.2 3.9 3.2 1.6 20 14 20 10 11 8 20 7 3.2 30 21 30 20 20 16 30 14 ns Ω 32 20 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 16 A VDS = 15 V, ID = 18 A 0.0062 0.0081 50 1.2 30 33 -6 2.5 ± 100 1 5 0.0075 0.0098 V mV/°C V nA µA Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68932 S-82616-Rev. B, 03-Nov-08 Si7114ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 4 TC = - 55 °C 3 VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 45 30 VGS = 3 V 2 TC = 25 °C 1 TC = 125 °C 15 0 0 2 4 6 8 10 0 0.0 0.6 1.2 1.8 2.4 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.012 1600 Transfer Characteristics R DS(on) - On-Resistance (Ω) Ciss 1200 0.009 VGS = 4.5 V C - Capacitance (pF) 800 VGS = 10 V 0.006 400 Coss Crss 0.003 0 20 40 60 80 100 ID - Drain Current (A) 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 I D = 18 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance VDS = 15 V 6 VDS = 24 V 4 1.5 1.8 ID = 18 A Capacitance VGS = 10 V (Normalized) 1.2 VGS = 4.5 V 0.9 2 0 0 4 8 12 16 20 24 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68932 S-82616-Rev. B, 03-Nov-08 www.vishay.com 3 Si7114ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.015 10 TJ = 150 °C TJ = 25 °C 1 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.1 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.3 60 On-Resistance vs. Gate-to-Source Voltage 2.0 ID = 250 µA VGS(th) (V) 1.7 Power (W) 50 40 30 1.4 20 1.1 10 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Single Pulse Power (Junction-to-Ambient) Limited by RDS(on)* 100 µs 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1 s, 10 s TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68932 S-82616-Rev. B, 03-Nov-08 Si7114ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 75 2.0 60 1.5 I D - Drain Current (A) 45 Package Limited 30 Power (W) 75 100 125 150 1.0 0.5 15 0 0 25 50 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Current Derating* Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68932 S-82616-Rev. B, 03-Nov-08 www.vishay.com 5 Si7114ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: Normalized Effective Transient Thermal Impedance 0.02 PDM 0.01 t1 t2 1. Duty Cycle, D = t1 t2 Single Pulse 0.001 10 -4 2. Per Unit Base = RthJA = 81 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68932. www.vishay.com 6 Document Number: 68932 S-82616-Rev. B, 03-Nov-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1