SI7116DN

Si7116DN Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 16.4 14.5 rDS(on) (W) 0.0078 @ VGS = 10 V 0.010 @ VGS = 4.5 V Qg (Typ) 15 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized D 100% Rg Tested RoHS COMPLIANT PowerPAK 1212-8 APPLICATIONS D Synchronous Rectification D Intermediate Switch D Synchronous Buck D S 3 4 G 3.30 mm S 1 2 S 3.30 mm D 8 7 6 5 D D D G Bottom View S Ordering Information: Si7116DN-T1—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 40 "20 16.4 Steady State Unit V 10.5 8.4 60 A 1.3 15 11 mJ 1.5 0.8 –55 to 150 260 W ID IDM IS IAS EAS 13.1 3.2 3.8 PD TJ, Tstg 2.0 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 24 65 1.9 Maximum 33 81 2.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73139 S-51412—Rev. C, 01-Aug-05 www.vishay.com 1 Si7116DN Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 16.4 A VGS = 4.5 V, ID = 14.5 A VDS = 15 V, ID = 16.4 A IS = 3.2 A, VGS = 0 V 40 0.0065 0.0083 68 0.8 1.2 0.0078 0.010 S V 1.5 2.5 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr IF = 3.2 A, di/dt = 100 A/ms IF = 3.2 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 0.7 VDS = 20 V, VGS = 4.5 V, ID = 16.4 A V, V, 15 6.7 5.1 1.4 10 10 36 10 30 26 2.1 15 15 55 15 60 52 nc ns W 23 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 60 Transfer Characteristics 50 50 I D – Drain Current (A) 40 I D – Drain Current (A) 40 30 30 20 20 TC = 125_C 10 25_C –55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 VDS – Drain-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 73139 S-51412—Rev. C, 01-Aug-05 2 Si7116DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.012 2400 Ciss Capacitance r DS(on) – On-Resistance ( W ) 0.010 C – Capacitance (pF) VGS = 4.5 V 0.008 VGS = 10 V 0.006 2000 1600 1200 0.004 800 Coss 0.002 400 Crss 0.000 0 10 20 30 40 50 60 0 0 5 10 15 20 25 30 35 40 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 20 V ID = 16.4 A rDS(on) – On-Resistance (Normalized) 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 16.4 A 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 30 35 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.020 60 0.016 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150_C 10 ID = 16.4 A 0.012 0.008 TJ = 25_C 0.004 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 73139 S-51412—Rev. C, 01-Aug-05 www.vishay.com 3 Si7116DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 –0.0 Power (W) –0.2 –0.4 –0.6 10 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) 30 ID = 250 mA 40 V GS(th) Variance (V) 50 Single Pulse Power, Juncion-to-Ambient 20 Safe Operating Area 100 *Limited by rDS(on) P(t) = 0.0001 10 I D – Drain Current (A) P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified P(t) = 1 P(t) = 10 dc IDM Limited 1 ID(on) Limited 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 1 Square Wave Pulse Duration (sec) 10–1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73139 S-51412—Rev. C, 01-Aug-05 Si7116DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73139. Document Number: 73139 S-51412—Rev. C, 01-Aug-05 www.vishay.com 5