SI7120DN

Si7120DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 10 8.2 rDS(on) (W) 0.019 @ VGS = 10 V 0.028 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKr 1212-8 Package with Low 1.07-mm Profile D 100% Rg Tested RoHS COMPLIANT Available APPLICATIONS PowerPAK 1212-8 D Primary Side Switch D Synchronous Rectification D 3.30 mm S 1 2 S 3 S 3.30 mm 4 D 8 7 D 6 D 5 D G G Ordering Information: Si7120DN-T1 Si7120DN-T1—E3 (Lead (Pb)-Free) S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 60 "20 10 8.0 40 3.2 22 24 3.8 2.4 Steady State Unit V 6.3 5.1 A 1.3 mJ 1.5 1.0 W −55 to 150 260 _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72771 S-51128—Rev. D, 13-Jun-05 www.vishay.com 1 Si7120DN Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8.2 A VDS = 15 V, ID = 10 A IS = 3.2 A, VGS = 0 V 30 0.015 0.023 35 0.78 1.2 0.019 0.028 1.5 2.5 3.5 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.2 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.65 VDS = 10 V, VGS = 10 V, ID = 10 A 30 6.9 5.8 1.3 14 12 50 12 60 1.95 25 20 80 20 100 ns W 45 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40.0 35.0 30.0 I D − Drain Current (A) 25.0 20.0 15.0 10.0 5.0 3V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 0.0 1.0 2.0 4V VGS = 10 thru 5 V I D − Drain Current (A) 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 TC = 125_C 25_C Transfer Characteristics −55_C 3.0 4.0 5.0 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 72771 S-51128—Rev. D, 13-Jun-05 2 Si7120DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.10 On-Resistance vs. Drain Current 3000.0 2500.0 C − Capacitance (pF) 2000.0 1500.0 1000.0 500.0 Coss Capacitance r DS(on) − On-Resistance ( W ) 0.08 Ciss 0.06 0.04 VGS = 4.5 V 0.02 VGS = 10 V 0.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 Crss 0.0 0.0 10.0 20.0 30.0 40.0 50.0 60.0 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 10.0 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 10 A Gate Charge 2.0 1.8 rDS(on) − On-Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 8.0 6.0 4.0 2.0 0.0 0.0 6.0 12.0 18.0 24.0 30.0 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.08 0.06 ID = 10 A 0.04 TJ = 25_C 0.02 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.0 2.0 4.0 6.0 8.0 10.0 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72771 S-51128—Rev. D, 13-Jun-05 www.vishay.com 3 Si7120DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) −0.0 Power (W) −0.2 −0.4 −0.6 −0.8 −1.0 −50.0 −25.0 10 30 ID = 250 mA 40 50 Single Pulse Power, Juncion-To-Ambient 20 0.0 25.0 50.0 75.0 100.0 125.0 150.0 0 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area *Limited by rDS(on) IDM Limited P(t) = 0.0001 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 P(t) = 1 P(t) = 10 dc 100 0.01 0.1 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72771 S-51128—Rev. D, 13-Jun-05 Si7120DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72771. Document Number: 72771 S-51128—Rev. D, 13-Jun-05 www.vishay.com 5