SI7272DP

New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0093 at VGS = 10 V 0.0124 at VGS = 4.5 V ID (A)a 25 25 Qg (Typ.) 8.2 FEATURES • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • PWM Optimized APPLICATIONS • System Power DC/DC PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 5.15 mm G1 S2 3 4 D1 G2 8 7 D1 D2 G1 6 5 D2 G2 Bottom View Ordering Information: Si7272DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Source-Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 25a 25a 15b, c 12b, c 60 19 3.0b, c 22 14 3.6b, c 2.3b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, f Symbol t ≤ 10 s Steady State RthJA RthJC Typ. 26 4 Max. 35 5.5 Unit °C/W Maximum Junction-to-Case (Drain) Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W. Document Number: 69026 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 1 New Product Si7272DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C I S = 10 A 0.8 20 15 11 9 TC = 25 °C 13 30 1.2 30 25 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 15 A VDS = 15 V, VGS = 4.5 V, ID = 15 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1100 200 90 17 8.2 3.2 2.7 3.5 20 15 22 10 10 10 22 10 7 30 25 35 15 15 15 35 15 ns Ω 26 13 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VDS = 10 V, ID = 15 A 30 0.0076 0.0103 45 0.0093 0.0124 1.2 30 28 - 5.6 2.5 100 1 10 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69026 S09-0269-Rev. B, 16-Feb-09 New Product Si7272DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 20 50 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 4 V 40 16 12 TC = 25 °C 8 30 20 VGS = 3 V 10 4 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.013 1500 Transfer Characteristics R DS(on) - On-Resistance (Ω) 1200 0.011 VGS = 4.5 V C - Capacitance (pF) 900 Ciss 0.009 VGS = 10 V 0.007 600 Coss 300 Crss 0.005 0 10 20 30 40 50 60 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 10 ID = 15 A VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 24 V 4 R DS(on) - On-Resistance 1.6 1.8 ID = 15 A Capacitance 1.4 (Normalized) 1.2 1.0 2 0.8 VGS = 4.5 V, 10 V 0 0 3 6 9 12 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 69026 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 3 New Product Si7272DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.030 ID = 15 A 0.025 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.020 TJ = 150 °C 10 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 TJ = 25 °C 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.4 2.2 32 2.0 Power (W) ID = 250 µA VGS(th) (V) 1.8 1.6 1.4 8 1.2 1.0 - 50 24 40 On-Resistance vs. Gate-to-Source Voltage 16 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 100 µs 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 10 s 1s TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 DC Single Pulse Power 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69026 S09-0269-Rev. B, 16-Feb-09 New Product Si7272DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 25 40 I D - Drain Current (A) 20 30 Power (W) Package Limited 15 20 10 10 5 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69026 S09-0269-Rev. B, 16-Feb-09 www.vishay.com 5 New Product Si7272DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = RthJA = 80 °C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69026. www.vishay.com 6 Document Number: 69026 S09-0269-Rev. B, 16-Feb-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1