SI7336ADP

Specification Comparison Vishay Siliconix Si7336ADP vs. Si7336DP Description: N-Channel MOSFET Package: PowerPAKr S0-8 Pin Out: Identical Part Number Replacements: Si7336ADP-T1 Replaces Si7336DP-T1 Lead (Pb)-Free: Si7336ADP-T1—E3 Replaces Si7336DP-T1—E3 Summary of Performance: The Si7336ADP is the recommended replacement for the original Si7336DP. The Si7336ADP has lower on-resistance, otherwise, both part numbers perform identically. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Current* Pulsed Drain Current Continuous Source Current* (MOSFET Diode Conduction) Avalanche Current Power Dissipation L = 1.0 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS PD Tj and Tstg RthJA RthJA Si7336ADP 30 "20 18 15 70 1.8 50 1.9 1.2 −55 to 150 65 1.5 Si7336DP 30 "20 18 15 70 1.8 NS** 1.9 1.2 −55 to 150 65 1.5 Unit V A W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* Maximum Junction-to-Case (Drain)* Note: * Indicates Steady State, all others are independent of time. ** NS denotes parameter not specified in original data sheet. SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si7336ADP Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Drain Source On Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS = 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD 30 0.0024 0.0031 110 0.72 1.1 0.0030 0.0040 1.0 3.0 "100 1 30 0.0026 0.0033 110 0.72 1.1 0.00325 0.0042 1.0 3.0 "100 1 V nA mA A W S V Si7336DP Max Min Typ Max Unit Symbol Min Typ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Document Number: 73260 05-Jan-05 Qg Qgs Qgd Rg Ciss Coss Crss 0.8 36 18 10 1.3 5600 860 415 2.0 0.8 50 36 18 10 1.3 5600 860 415 www.vishay.com p pF 2.0 W 50 nC 1 Specification Comparison Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si7336ADP Parameter Switching Turn-On Time Turn-On Time Turn-Off Turn Off Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr 24 16 90 32 45 35 25 140 50 70 24 16 90 32 45 35 25 140 50 70 ns Si7336DP Max Min Typ Max Unit Symbol Min Typ www.vishay.com 2 Document Number: 73260 05-Jan-05