SI7336DP-T1

Si7336DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00325 @ VGS = 10 V 0.0042 @ VGS = 4.5 V ID (A) 30 27 Qg (Typ) 36 D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Low-Side DC/DC Conversion − Notebook − Server − Workstation D Synchronous Rectifier, POL PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7336DP-T1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 1.0 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS PD TJ, Tstg 10 secs 30 "20 30 25 70 4.5 50 5.4 3.4 Steady State Unit V 18 15 A 1.8 1.9 1.2 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72415 S-41795—Rev. C, 04-Oct-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7336DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0026 0.0033 110 0.72 1.1 0.00325 0.0042 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.8 VDS = 15 V, VGS = 4.5 V, ID = 20 A , , VDS = 15 V, VGS = 0 V, f = 1 MHz , 5600 860 415 36 18 10 1.3 24 16 90 32 45 2.0 35 25 140 50 70 ns W 50 nC p pF Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 50 40 30 20 10 3V 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 VGS = 10 thru 4 V 60 50 40 30 20 TC = 125_C 10 25_C −55_C 2.5 3.0 3.5 4.0 Transfer Characteristics I D − Drain Current (A) I D − Drain Current (A) VGS − Gate-to-Source Voltage (V) Document Number: 72415 S-41795—Rev. C, 04-Oct-04 2 Si7336DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.005 On-Resistance vs. Drain Current 7000 6000 Capacitance Ciss r DS(on) − On-Resistance ( W ) 0.004 C − Capacitance (pF) VGS = 4.5 V 0.003 VGS = 10 V 0.002 5000 4000 3000 2000 1000 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 Crss Coss 0.001 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 5 10 15 VDS = 15 V ID = 20 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 25 A 1.4 rDS(on) − On-Resiistance (Normalized) 20 25 30 35 40 45 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.015 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 TJ = 150_C r DS(on) − On-Resistance ( W ) 0.012 ID = 25 A 0.009 1 TJ = 25_C 0.006 0.003 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72415 S-41795—Rev. C, 04-Oct-04 0.000 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7336DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −50 40 Power (W) 120 ID = 250 mA 200 Single Pulse Power 160 80 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on)* 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72415 S-41795—Rev. C, 04-Oct-04 Si7336DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72415. Document Number: 72415 S-41795—Rev. C, 04-Oct-04 www.vishay.com 5