SI7358DP

Si7358DP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.00525 @ VGS = 10 V 0.007 @ VGS = 4.5 V ID (A) 23 20 D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters D Synchronous Rectifiers PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 23 Steady State Unit V 14 11 60 A 1.6 1.9 1.2 –55 to 150 W _C ID IDM IS PD TJ, Tstg 18 4.5 5.4 3.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71882 S-20951—Rev. A, 01-Jul-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7358DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 23 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 23 A IS = 4.5 A, VGS = 0 V 30 0.0040 0.0055 90 0.75 1.1 0.00525 0.007 S V 1.0 3.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 23 A 30.5 13.5 9.5 1.4 21 10 83 27 50 35 20 130 45 80 ns W 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 50 60 Transfer Characteristics I D – Drain Current (A) 40 I D – Drain Current (A) 40 30 30 20 3V 20 TC = 125_C 10 25_C –55_C 3.0 3.5 4.0 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71882 S-20951—Rev. A, 01-Jul-02 Si7358DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 6500 Vishay Siliconix Capacitance r DS(on) – On-Resistance ( W ) 0.008 VGS = 4.5 V VGS = 10 V 0.004 C – Capacitance (pF) 5200 Ciss 3900 0.006 2600 0.002 1300 Crss Coss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 23 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 23 A r DS(on) – On-Resistance ( W) (Normalized) 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 15 30 45 60 75 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.020 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) – On-Resistance ( W ) 0.016 ID = 23 A 0.012 I S – Source Current (A) TJ = 25_C 0.008 0.004 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71882 S-20951—Rev. A, 01-Jul-02 www.vishay.com 3 Si7358DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 40 –0.0 –0.2 –0.4 –0.6 –0.8 –50 10 Power (W) ID = 250 mA 60 50 Single Pulse Power V GS(th) Variance (V) 30 20 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D – Drain Current (A) 10 ms 100 ms 1s TC = 25_C Single Pulse 10 s dc 1 ms 1 0.1 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 1 Square Wave Pulse Duration (sec) 10–1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71882 S-20951—Rev. A, 01-Jul-02 Si7358DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71882 S-20951—Rev. A, 01-Jul-02 www.vishay.com 5