SI7366DP

Si7366DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0055 at VGS = 10 V 0.009 at VGS = 4.5 V ID (A) 20 16 FEATURES • Halogen-free available • TrenchFET® Power MOSFET • Qg Optimized RoHS COMPLIANT APPLICATIONS • Synchronous Rectifier for DC/DC PowerPAK® SO-8 6.15 mm S 1 2 3 S S 5.15 mm G 4 D D 8 7 6 5 D D D G Bottom View Ordering Information: Si7366DP-T1-E3 (Lead (Pb)-free) Si7366DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 20 ± 20 13 10 50 1.4 1.7 1.1 - 55 to 150 260 Unit V 20 17 4.1 5 3.2 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t ≤ 10 s Steady State Steady State RthJA °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. . Typical 20 53 3.4 Maximum 25 70 4.5 Unit Document Number: 72296 S-80440-Rev. C, 03-Mar-08 www.vishay.com 1 Si7366DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.1 A, di/dt = 100 A/µs VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω VDS = 10 V, VGS = 4.5 V, ID = 20 A 16 6 5.2 1.8 21 16 58 15 40 32 25 90 23 80 ns Ω 25 nC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 16 A VDS = 6 V, ID = 20 A IS = 4.5 A, VGS = 0 V Min. 1.0 Typ. Max. 3.0 ± 100 1 5 Unit V nA µA A 30 0.0045 0.0072 48 0.76 1.1 0.0055 0.009 Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 VGS = 10 thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 60 40 40 30 30 20 3V 10 20 TC = 125 °C 10 25 °C - 55 °C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72296 S-80440-Rev. C, 03-Mar-08 Si7366DP Vishay Siliconix TYPICAL CHARACTERISTICS 0.015 25 °C, unless otherwise noted 3000 R DS(on) - On-Resistance (Ω) 0.012 C - Capacitance (pF) 2400 Ciss 0.009 VGS = 4.5 V 1800 0.006 VGS = 10 V 0.003 1200 Coss 600 Crss 0.000 0 10 20 30 40 50 0 0 4 8 12 16 20 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 VDS = 10 V ID = 20 A R DS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 10 V ID = 20 A Capacitance VGS - Gate-to-Source Voltage (V) 5 4 3 1.2 2 1.0 1 0 0 3 6 9 12 15 18 21 0.8 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 60 0.030 On-Resistance vs. Junction Temperature TJ = 150 °C 10 TJ = 25 °C R DS(on) - On-Resistance (Ω) 0.024 I S - Source Current (A) 0.018 ID = 20 A 0.012 0.006 1 0.00 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72296 S-80440-Rev. C, 03-Mar-08 www.vishay.com 3 Si7366DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 200 0.2 ID = 250 µA VGS(th) Variance (V) 0.0 Power (W) 160 120 - 0.2 80 - 0.4 - 0.6 40 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 Limited by R DS(on)* 10 I D - Drain Current (A) 10 ms 1 1 ms 100 ms 1s 10 s 0.1 TC = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 53°C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72296 S-80440-Rev. C, 03-Mar-08 Si7366DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.01 10- 4 0.02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72296. Document Number: 72296 S-80440-Rev. C, 03-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1