SI7370DP-T1

Si7370DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 15.8 14.5 rDS(on) (W) 0.011 @ VGS = 10 V 0.013 @ VGS = 6 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested APPLICATIONS PowerPAK SO-8 D Primary Side Switch for 24-V DC/DC Applications D Secondary Synchronous Rectifier D 6.15 mm S 1 2 S 3 S 5.15 mm 4 D 8 7 D 6 D 5 D G G S N-Channel MOSFET Bottom View Ordering Information: Si7370DP-T1 Si7370DP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Continuous Source Current Pulsed Drain Current Avalanche Current Single Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 10 secs 60 "20 15.8 12.6 4.7 50 50 125 5.2 3.3 Steady State Unit V 9.6 7.7 1.7 A mJ 1.9 1.25 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71874 S-41262—Rev. D, 05-Jul-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W 1 Si7370DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12 A VGS = 6.0 V, ID = 10 A VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V 50 0.009 0.0105 50 0.75 1.2 0.011 0.013 W S V 2.0 4.0 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W V, ID ^ 1.0 A, VGEN = 10 V, Rg = 6 W 0.2 VDS = 30 V, VGS = 10 V, ID = 12 A 46 11.5 11.5 0.85 16 12 50 30 40 1.2 25 18 75 45 60 ns W 57 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 10 25_C −55_ C 0 1 2 3 4 5 6 10 2, 3 V 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) 4V 0 VGS − Gate-to-Source Voltage (V) Document Number: 71874 S-41262—Rev. D, 05-Jul-04 www.vishay.com 2 Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 r DS(on) − On-Resistance ( W ) 4000 3500 0.015 VGS = 6 V 0.010 VGS = 10 V C − Capacitance (pF) 3000 2500 2000 1500 1000 500 0.000 0 10 20 30 40 50 0 0 15 30 45 60 Crss Ciss Capacitance 0.005 Coss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 30 V ID = 5 A 8 rDS(on) − On-Resiistance (Normalized) 1.5 1.2 0.9 0.6 0.3 0 0 10 20 30 40 50 Qg − Total Gate Charge (nC) 0.0 −50 2.1 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5 A 6 4 2 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.08 ID = 5 A 0.06 I S − Source Current (A) TJ = 150_C 10 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71874 S-41262—Rev. D, 05-Jul-04 www.vishay.com 3 Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0.6 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 −0.2 −0.6 −1.0 −1.4 −50 20 60 100 Single Pulse Power, Juncion-To-Ambient 80 40 0 −25 0 25 50 75 100 125 150 175 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 100 Limited by rDS(on) Safe Operating Area 10 ms 100 ms 1 ms 10 ms 10 I D − Drain Current (A) 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s 100 s, dc 0.01 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 58_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 71874 S-41262—Rev. D, 05-Jul-04 Si7370DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71874 S-41262—Rev. D, 05-Jul-04 www.vishay.com 5