Si7392DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching WFETr
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00975 @ VGS = 10 V 0.01375 @ VGS = 4.5 V
ID (A)
15 13
D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
APPLICATIONS
D High-Side DC/DC Conversion − Notebook − Server
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
PowerPAK SO-8
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7392DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 15 12 "50 4.1 5 3.2
Steady State
Unit
V
9 7 A
1.5 1.8 1.1 −55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72165 S-41427—Rev. D, 26-Jul-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
20 53 3.5
Maximum
25 70 4.5
Unit
_C/W
1
Si7392DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VDS = 15 V, ID = 15 A IS = 4.1 A, VGS = 0 V 40 0.008 0.011 40 0.75 1.1 0.00975 0.01375 1.0 3.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 15 A 10 3.5 2.6 1.6 15 7 46 9 30 2.7 25 15 70 17 60 ns W 15 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 50
Transfer Characteristics
30 3V
30
20
20 TC = 125_C 10 25_C −55_C
10
0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V) Document Number: 72165 S-41427—Rev. D, 26-Jul-04
2
Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030 r DS(on) − On-Resistance ( W ) 1800 1500 1200 900 Coss 600 300 0 0 10 20 30 40 50 0 6 12 18 24 30 Crss Ciss
Capacitance
0.024
0.018
0.012
VGS = 4.5 V VGS = 10 V
0.006
0.000
ID − Drain Current (A)
C − Capacitance (pF)
VDS − Drain-to-Source Voltage (V)
Gate Charge
6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) VDS = 15 V ID = 15 A rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 15 A
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.040
On-Resistance vs. Gate-to-Source Voltage
10
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
TJ = 150_C
0.032
0.024
ID = 15 A
1
0.016
TJ = 25_C
0.008
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 72165 S-41427—Rev. D, 26-Jul-04
www.vishay.com
3
Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 0.4 V GS(th) Variance (V) 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 40 ID = 250 mA Power (W) 120 200
Single Pulse Power
160
80
0 −25 0 25 50 75 100 125 150 10−3 10−2 10−1 Time (sec) 1 10 TJ − Temperature (_C)
100 Limited by rDS(on) 10 I D − Drain Current (A)
Safe Operating Area, Junction-to-Case
1 ms
10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc
0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 125_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
4
Document Number: 72165 S-41427—Rev. D, 26-Jul-04
Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72165 S-41427—Rev. D, 26-Jul-04
www.vishay.com
5
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