SI7404DN

Si7404DN New Product Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 13.3 12.4 10.2 rDS(on) (W) 0.013 @ VGS = 10 V 0.015 @ VGS = 4.5 V 0.022 @ VGS = 2.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Lilon Battery Protection PowerPAKt 1212-8 D S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm 3.30 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Single Avalanche Current Single Avalanche Energy (Duty Cycle 1%) Continuous Source Current (Diode Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a TA = 25_C TA = 70_C 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "12 13.3 Steady State Unit V 8.5 6.8 40 15 11 mJ 1.3 1.5 0.8 –55 to 150 W _C A A ID IDM IAS EAS IS PD TJ, Tstg 10.6 3.2 3.8 2.0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71658 S-05681—Rev. C, 07-Feb-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W 1 Si7404DN Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 13.3 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 12.4 A VGS = 2.5 V, ID = 5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 13.3 A IS = 3.2 A, VGS = 0 V 40 0.010 0.0125 0.019 50 0.75 1.2 0.013 0.015 0.022 S V W 0.6 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.2 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 13.3 A 20 5.8 7.1 27 39 64 33 45 40 60 100 50 90 ns 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 35 30 I D – Drain Current (A) 25 20 15 10 5 1, 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 2V I D – Drain Current (A) VGS = 10 thru 3 V 2.5 V 40 35 30 25 20 15 10 5 Transfer Characteristics TC = 125_C 25_C –55_C 1.5 2.0 2.5 3.0 1.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71658 S-05681—Rev. C, 07-Feb-02 Si7404DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 3000 Vishay Siliconix Capacitance r DS(on) – On-Resistance ( W ) 0.04 C – Capacitance (pF) 2500 Ciss 2000 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 0.01 VGS = 10 V 0.00 0 5 10 15 20 25 30 35 40 1500 1000 Coss Crss 0 0 5 10 15 20 25 30 500 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 13.3 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 13.3 A r DS(on) – On-Resistance (W ) (Normalized) 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 10 20 30 40 50 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.05 50 On-Resistance vs. Gate-to-Source Voltage ID = 13.3 A r DS(on) – On-Resistance ( W ) 0.04 ID = 5 A 0.03 I S – Source Current (A) TJ = 150_C 10 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71658 S-05681—Rev. C, 07-Feb-02 www.vishay.com 3 Si7404DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.30 ID = 2 mA 40 50 Single Pulse Power, Juncion-To-Ambient 0.15 V GS(th) Variance (V) Power (W) 0.00 30 –0.15 20 –0.30 10 –0.45 –0.60 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 65_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 www.vishay.com 4 Document Number: 71658 S-05681—Rev. C, 07-Feb-02