SI7407DN

Si7407DN New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.012 @ VGS = -4.5 V -12 0.016 @ VGS = -2.5 V 0.024 @ VGS = -1.8 V FEATURES ID (A) -15.6 - 13.5 - 11 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D Ultra-Low rDS(on) APPLICATIONS D Load Switch D PA Switch D Battery Switch PowerPAKt 1212-8 S 3.30 mm S 1 2 3 S S 3.30 mm G 4 G D 8 7 6 5 D D D D P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 11.2 IDM IS -3.2 3.8 2.0 -55 to 150 -30 -1.3 1.5 0.8 W _C -7.2 A Symbol VDS VGS 10 secs Steady State -12 "8 Unit V - 15.6 -9.9 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71912 S-22122—Rev. B, 25-Nov-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W 1 Si7407DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -400 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 85_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -15.6 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -13.5 A VGS = -1.8 V, ID = -5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -6 V, ID = -15.6 A IS = -3.2 A, VGS = 0 V -30 0.009 0.013 0.019 52 -0.7 -1.2 0.012 0.016 0.024 S V W -0.40 -1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -3.2 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -6 V, VGS = -4.5 V, ID = -15.6 A 39 6 11 30 50 200 165 60 45 75 300 250 90 ns 59 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 25 25 30 Transfer Characteristics I D - Drain Current (A) 20 1.5 V 15 I D - Drain Current (A) 20 15 10 10 TC = 125_C 5 25_C -55 _C 5 1V 0 0 1 2 3 4 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71912 S-22122—Rev. B, 25-Nov-02 Si7407DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 5000 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 4000 C - Capacitance (pF) 0.03 Ciss 3000 0.02 VGS = 1.8 V VGS = 2.5 V 2000 Coss 1000 Crss 0.01 VGS = 4.5 V 0.00 0 5 10 15 20 25 30 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 15.6 A 1.3 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 15.6 A 3 r DS(on) - On-Resistance (W ) (Normalized) 18 27 36 45 4 1.2 1.1 2 1.0 1 0.9 0 0 9 0.8 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.04 30 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 0.03 ID = 15.6 A 0.02 ID = 5 A TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71912 S-22122—Rev. B, 25-Nov-02 www.vishay.com 3 Si7407DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 40 50 Single Pulse Power, Juncion-To-Ambient 0.3 V GS(th) Variance (V) Power (W) 0.2 30 0.1 20 0.0 10 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) 1 ms 10 ms ID(on) Limited 100 ms 1s 10 s 1 0.1 TC = 25_C Single Pulse BVDSS Limited dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71912 S-22122—Rev. B, 25-Nov-02 Si7407DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 71912 S-22122—Rev. B, 25-Nov-02 www.vishay.com 5