SI7411DN-T1-E3

Si7411DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.019 @ VGS = −4.5 V −20 0.025 @ VGS = −2.5 V 0.034 @ VGS = −1.8 V FEATURES ID (A) −11.4 −9.9 −8.5 D TrenchFETr Power MOSFET: 1.8-V Rated D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile APPLICATIONS D Load Switch PowerPAKr 1212-8 S 3.30 mm S 1 2 S 3 S 3.30 mm 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7411DN-T1—E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "8 Unit V −11.4 −8.2 −30 −3 3.6 1.9 −55 to 150 −7.5 −5.4 A −1.3 1.5 0.8 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72399 S-40763—Rev. C, 19-Apr-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 28 65 2.9 Maximum 35 81 3.8 Unit _C/W 1 Si7411DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −300 mA VDS = 0 V, VGS = "8 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS v −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −11.4 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −9.9 A VGS = −1.8 V, ID = −2.9 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −15 V, ID = −11.4 A IS = −3.0 A, VGS = 0 V −30 0.015 0.020 0.027 35 −0.8 −1.2 0.019 0.025 0.034 S V W −0.4 −1.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −3.2 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W 10 V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −10 V, VGS = −4.5 V, ID = −11.4 A 27 3.9 7 5 23 45 135 70 29 35 70 200 105 50 ns W 41 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 25 20 15 10 5 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 1V 5 1.5 V 25 20 15 10 TC = 125_C 5 0 0.0 25_C −55_C 0.5 1.0 1.5 2.0 2.5 30 Transfer Characteristics I D − Drain Current (A) I D − Drain Current (A) VGS − Gate-to-Source Voltage (V) Document Number: 72399 S-40763—Rev. C, 19-Apr-04 2 Si7411DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.10 On-Resistance vs. Drain Current 4000 Capacitance r DS(on) − On-Resistance ( W ) 0.08 C − Capacitance (pF) 3200 Ciss 2400 0.06 0.04 VGS = 1.8 V VGS = 2.5 V 1600 0.02 VGS = 4.5 V 0.00 0 5 10 15 20 25 30 800 Crss 0 4 8 Coss 0 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 11.4 A Gate Charge 1.5 1.4 r DS(on) − On-Resistance (W ) (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 11.4 A 4 3 2 1 0 0 5 10 15 20 25 30 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C r DS(on) − On-Resistance ( W ) 0.08 ID = 11.4 A 0.06 ID = 2.9 A 10 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72399 S-40763—Rev. C, 19-Apr-04 www.vishay.com 3 Si7411DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 −0.1 −0.2 −50 10 ID = 300 mA 40 50 Single Pulse Power, Juncion-to-Ambient Power (W) 30 20 −25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 10 dc 0.01 0.1 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72399 S-40763—Rev. C, 19-Apr-04 Si7411DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 72399 S-40763—Rev. C, 19-Apr-04 www.vishay.com 5