Si7413DN
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.015 @ VGS = −4.5 V −20 0.020 @ VGS = −2.5 V 0.029 @ VGS = −1.8 V
FEATURES
ID (A)
−13.2 −11.4 −9.5
D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile
APPLICATIONS
D Load Switch
PowerPAK 1212-8
S
3.30 mm
S 1 2 S 3 S
3.30 mm
4 D 8 7 D 6 D 5 D
G
G
D P-Channel MOSFET
Bottom View Ordering Information: Si7413DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−20 "8
Unit
V
−13.2 −9.5 −30 −3.2 3.8 2.0 −55 to 150
−8.4 −6.1 A
−1.3 1.5 0.8 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72616 S-32519—Rev. A, 08-Dec-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
26 65 1.9
Maximum
33 81 2.4
Unit
_C/W
1
Si7413DN
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −400 mA VDS = 0 V, VGS = "8 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS v −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −13.2 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −11.4 A VGS = −1.8 V, ID = −3.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −15 V, ID = −13.2 A IS = −3.2 A, VGS = 0 V −30 0.012 0.016 0.023 47 −0.8 −1.2 0.015 0.020 0.029 S V W −0.4 −1.0 "100 −1 −5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −3.2 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −10 V, VGS = −4.5 V, ID = −13.2 A 34 5.4 8.8 5 30 50 200 95 35 45 75 300 140 55 ns W 51 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 25 20 15 10 5 0 0 1
30 25 20 15 10
VGS = 5 thru 2 V I D − Drain Current (A)
I D − Drain Current (A)
1.5 V
TC = 125_C 5 25_C −55_C 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
1V 2 3 4 5
0 0.00
VDS − Drain-to-Source Voltage (V) www.vishay.com
VGS − Gate-to-Source Voltage (V) Document Number: 72616 S-32519—Rev. A, 08-Dec-03
2
Si7413DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
Vishay Siliconix
On-Resistance vs. Drain Current
5000
Capacitance
r DS(on) − On-Resistance ( W )
0.04 C − Capacitance (pF)
4000 Ciss 3000
0.03 VGS = 1.8 V 0.02 VGS = 2.5 V
2000
0.01
VGS = 4.5 V
1000 Crss
Coss
0.00 0 5 10 15 20 25 30
0 0 4 8 12 16 20
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 13.2 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 13.2 A
3
r DS(on) − On-Resistance (W ) (Normalized)
4
1.4
1.2
2
1.0
1
0.8
0 0 5 10 15 20 25 30 35 40 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.06 0.05
On-Resistance vs. Gate-to-Source Voltage
I S − Source Current (A)
TJ = 150_C
r DS(on) − On-Resistance ( W )
0.04 ID = 3.5 A 0.03 0.02 0.01 0.00
ID = 13.2 A
10
TJ = 25_C
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
Document Number: 72616 S-32519—Rev. A, 08-Dec-03
www.vishay.com
3
Si7413DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 −0.1 −0.2 −50 10 ID = 400 mA 40 50
Single Pulse Power, Juncion-To-Ambient
Power (W)
30
20
−25
0
25
50
75
100
125
150
0 0.01 0.1 1 Time (sec) 10 100 600
TJ − Temperature (_C)
100
Safe Operating Area, Junction-To-Ambient
rDS(on) Limited IDM Limited
10 I D − Drain Current (A)
P(t) = 0.001 P(t) = 0.01
1
ID(on) Limited
P(t) = 0.1 P(t) = 1
0.1
TA = 25_C Single Pulse BVDSS Limited
P(t) = 10 dc
0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
4
Document Number: 72616 S-32519—Rev. A, 08-Dec-03
Si7413DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 Single Pulse 0.05 0.02
0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1
Document Number: 72616 S-32519—Rev. A, 08-Dec-03
www.vishay.com
5
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