SI7439DP

Si7439DP New Product Vishay Siliconix P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −150 FEATURES ID (A) −5.2 −5.0 rDS(on) (W) 0.090 @ VGS = −10 V 0.095 @ VGS = −6 V D TrenchFETr Power MOSFETS D Ultra-Low On-Resistance Critical for Application D Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg and Avalanche Tested APPLICATIONS D Active Clamp in Intermediate DC/DC Power Supplies PowerPAK SO-8 6.15 mm S 1 2 S 3 S 5.15 mm S 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7439DP-T1—E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs Steady State −150 "20 Unit V −5.2 −4.1 −50 −4.2 −40 80 5.4 3.4 −55 to 150 −3.0 −2.4 A −1.6 mJ 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes Document Number: 73106 S-41526—Rev. A, 16-Aug-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7439DP Vishay Siliconix a. Surface Mounted on 1” x 1” FR4 Board. New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −150 V, VGS = 0 V VDS = −150 V, VGS = 0 V, TJ = 70_C VDS = −10 V, VGS = −10 V VGS = −10 V, ID = −5.2 A VGS = −6 V, ID = −5.0 A VDS = −15 V, ID = −5.2 A IS = −4.2 A, VGS = 0 V −30 0.073 0.077 19 −0.78 −1.2 0.090 0.095 −2.0 −4.0 "100 −1 −10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.9 A, di/dt = 100 A/ms VDD = −75 V, RL = 15.5 W V, 5.5 ID ^ −4.8 A, VGEN = −10 V, Rg = 6 W 1.5 VDS = −75 V, VGS = −10 V, ID = −5.2 A 88 17.5 26.5 3 25 46 115 64 100 4.5 40 70 180 100 150 ns W 135 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 35 30 I D − Drain Current (A) 25 20 15 10 5 4V 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) www.vishay.com −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS − Gate-to-Source Voltage (V) Document Number: 73106 S-41526—Rev. A, 16-Aug-04 I D − Drain Current (A) VGS = 10 thru 5 V 40 50 Transfer Characteristics 30 20 TC = 125_C 10 25_C 2 Si7439DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.15 Vishay Siliconix On-Resistance vs. Drain Current 6000 5000 C − Capacitance (pF) 4000 3000 2000 1000 0 Crss 0 30 Capacitance r DS(on) − On-Resistance ( W ) 0.12 Ciss 0.09 VGS = 6 V VGS = 10 V 0.06 0.03 Coss 0.00 0 10 20 30 40 50 60 90 120 150 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) VDS = 75 V ID = 5.2 A Gate Charge 2.2 1.9 rDS(on) − On-Resiistance (Normalized) 1.6 1.3 1.0 0.7 0.4 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.2 A 8 6 4 2 0 0 15 30 45 60 75 90 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.20 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 TJ = 150_C r DS(on) − On-Resistance ( W ) 0.16 0.12 ID = 5.2 A 0.08 1 TJ = 25_C 0.04 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) 0.00 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Document Number: 73106 S-41526—Rev. A, 16-Aug-04 www.vishay.com 3 Si7439DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.3 1.0 V GS(th) Variance (V) 0.7 0.4 0.1 −0.2 −0.5 −50 40 ID = 250 mA Power (W) 120 200 Single Pulse Power 160 80 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 100 Limited by rDS(on) Safe Operating Area 10 I D − Drain Current (A) 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) dc 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 73106 S-41526—Rev. A, 16-Aug-04 Si7439DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73106 S-41526—Rev. A, 16-Aug-04 www.vishay.com 5