SI7440DP-T1

Si7440DP Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 21 19 rDS(on) (W) 0.0065 @ VGS = 10 V 0.008 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D DC/DC Converters D Optimized for “Low-Side” Synchronous Rectifier Operation PowerPAK SO-8 D 6.15 mm S 1 2 3 S S 5.15 mm G 4 G D 8 7 6 5 D D D S N-Channel MOSFET Bottom View Ordering Information: Si7440DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 21 Steady State Unit V 12 9 60 A 1.6 1.9 1.2 -55 to 150 W _C ID IDM IS PD TJ, Tstg 17 4.3 5.4 3.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71623 S-31728—Rev. B, 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W 1 Si7440DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentNO TAG Drain-Source On-State ResistanceNO TAG Source Forward TransconductanceNO TAG Diode Forward VoltageNO TAG VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 21 A IS = 4.3 A, VGS = 0 V 40 0.0053 0.0065 65 0.72 1.2 0.0065 0.008 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit DynamicNO TAG Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 21 A 29.0 10.5 10.0 1.4 18 16 75 41 50 2.2 28 25 180 65 80 ns W 35 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 60 Transfer Characteristics 50 50 I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 3V 20 30 20 TC = 125_C 25_C -55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 10 0 0 2 4 6 8 10 0 0.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71623 S-31728—Rev. B, 18-Aug-03 Si7440DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 5000 Capacitance r DS(on) - On-Resistance ( W ) 0.008 0.006 C - Capacitance (pF) VGS = 4.5 V 4000 Ciss VGS = 10 V 3000 0.004 2000 Coss 0.002 1000 Crss 0.000 0 10 20 30 40 50 60 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 21 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 21 A 4 r DS(on) - On-Resistance ( W) (Normalized) 16 24 32 40 5 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0 8 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.030 50 0.024 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 ID = 21 A 0.018 0.012 TJ = 25_C 0.006 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71623 S-31728—Rev. B, 18-Aug-03 www.vishay.com 3 Si7440DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 -0.0 Power (W) -0.2 -0.4 -0.6 40 -0.8 -1.0 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 120 ID = 250 mA 160 V GS(th) Variance (V) 200 Single Pulse Power, Juncion-To-Ambient 80 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 68_C/W Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71623 S-31728—Rev. B, 18-Aug-03