Si7456DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.025 @ VGS = 10 V 0.028 @ VGS = 6.0 V
ID (A)
9.3 8.8
D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested
APPLICATIONS
D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V, Full-/Half-Bridge DC/DC D Industrial and 42-V Automotive
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7456DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
10 secs
100 "20 9.3 6.7 40 30 45 4.3 5.2 2.7
Steady State
Unit
V
5.7 4.1 A
mJ 1.6 1.9 1.0 A W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71603 S-31989—Rev. D, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
19 52 1.5
Maximum
24 65 1.8
Unit
_C/W
1
Si7456DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9.3 A VGS = 6.0 V, ID = 8.8 A VDS = 15 V, ID = 9.3 A IS = 4.3 A, VGS = 0 V 40 0.021 0.023 35 0.8 1.2 0.025 0.028 2 "100 1 20 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.3 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 50 V, VGS = 10 V, ID = 9.3 A 36 10 8.6 1.27 20 10 46 26 50 2.1 40 20 90 50 80 ns W 44 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 6 V 32 I D - Drain Current (A) I D - Drain Current (A) 5V 32 40
Transfer Characteristics
24
24
16
16 TC = 125_C 8 25_C - 55_C 0
8 4V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V) Document Number: 71603 S-31989—Rev. D, 13-Oct-03
www.vishay.com
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Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04 r DS(on) - On-Resistance ( W ) 3500 3000 0.03 VGS = 6.0 V 0.02 C - Capacitance (pF) 2500 2000 1500 1000 500 0.00 0 8 16 24 32 40 0 0 10 20 30 40 50 60 Crss Coss
Capacitance
Ciss
VGS = 10 V
0.01
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 9.3 A 8 2.6 2.3 2.0 1.7 1.4 1.1 0.8 0 0 6 12 18 24 30 36 Qg - Total Gate Charge (nC) 0.5 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 9.3 A
6
4
2
r DS(on) - On-Resistance (W ) (Normalized)
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40 0.08
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C 10
0.06
ID = 9.3 A
0.04
TJ = 25_C
0.02
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71603 S-31989—Rev. D, 13-Oct-03
www.vishay.com
3
Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.5 50
Single Pulse Power
40 0.0 V GS(th) Variance (V) ID = 250 mA Power (W) 30
- 0.5
20
- 1.0
10
- 1.5 - 50
- 25
0
25
50
75
100
125
150
0 0.01
0.1
1
10
100
600
TJ - Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5 0.2 0.1
0.1 0.02 Single Pulse 0.05
0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (sec) 0.1 1
www.vishay.com
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Document Number: 71603 S-31989—Rev. D, 13-Oct-03
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