SI7460DP

Si7460DP Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 18 16 rDS(on) (W) 0.0096 @ VGS = 10 V 0.012 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Automotive 12/24-V Battery - ABS - ECU - Motor Drives PowerPAK SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: Si7460DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 60 "20 18 14 40 4.3 50 125 5.4 3.4 Steady State Unit V 11 8 A 1.6 mJ 1.9 1.2 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72126 S-03416—Rev. A, 03-Mar-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W 1 Si7460DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentNO TAG Drain-Source On-State ResistanceNO TAG Source Forward TransconductanceNO TAG Diode Forward VoltageNO TAG VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 16 A VDS = 15 V, ID = 18 A IS = 4.3 A, VGS = 0 V 40 0.008 0.010 60 0.72 1.2 0.0096 0.012 1.0 3 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit DynamicNO TAG Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 4.3 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 30 V, VGS = 10 V, ID = 18 A 65 10.5 16 20 16 75 30 41 30 25 120 45 65 ns 100 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics VGS = 10 thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 40 Transfer Characteristics 24 24 16 16 TC = 125_C 8 25_C 0 0.0 -55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 8 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72126 S-03416—Rev. A, 03-Mar-03 Si7460DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.020 On-Resistance vs. Drain Current 5000 Capacitance r DS(on) - On-Resistance ( W ) 0.016 C - Capacitance (pF) 4000 Ciss 3000 0.012 VGS = 4.5 V VGS = 10 V 0.008 2000 0.004 1000 Crss 0 10 Coss 0.000 0 8 16 24 32 40 0 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 18 A Gate Charge 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 18 A 6 4 2 0 0 20 40 60 80 Qg - Total Gate Charge (nC) r DS(on) - On-Resistance ( W) (Normalized) 8 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.020 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.016 ID = 18 A 0.012 I S - Source Current (A) TJ = 150_C 10 0.008 TJ = 25_C 0.004 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72126 S-03416—Rev. A, 03-Mar-03 www.vishay.com 3 Si7460DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 ID = 250 mA 0.4 V GS(th) Variance (V) 80 100 Single Pulse Power, Juncion-To-Ambient Power (W) 0.0 60 -0.4 40 -0.8 20 -1.2 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.001 ID(on) Limited P(t) = 0.01 1 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 10 dc Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72126 S-03416—Rev. A, 03-Mar-03 Si7460DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (sec) 10 - 1 1 Document Number: 72126 S-03416—Rev. A, 03-Mar-03 www.vishay.com 5