SI7495DP

Si7495DP New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0065 @ VGS = - 4.5 V - 12 0.008 @ VGS = - 2.5 V 0.011 @ VGS = - 1.8 V FEATURES ID (A) - 21 - 19 - 16 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Load Switch PowerPAK SO-8 S 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G D P-Channel MOSFET Bottom View Ordering Information: Si7495DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State - 12 "8 Unit V - 21 - 17 - 50 - 4.5 5 3.2 - 55 to 150 - 13 - 10 A - 1.6 1.8 1.1 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72277 S-31417—Rev. A, 07-Jul-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 20 54 1.7 Maximum 25 68 2.2 Unit _C/W 1 Si7495DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 1 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 21 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 19 A VGS = - 1.8 V, ID = - 16 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 15 V, ID = - 21 A IS = - 4.5 A, VGS = 0 V - 40 0.0054 0.0065 0.0088 80 - 0.65 - 1.1 0.0065 0.008 0.011 S V W - 0.4 - 0.9 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = - 2.9 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 5 V, ID = - 21 A 93 10.5 22 2.7 100 200 350 230 110 150 300 530 350 165 ns W 140 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 5 thru 2 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 1.5 V 20 30 20 TC = 125_C 10 25_C - 55_C 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Document Number: 72277 S-31417—Rev. A, 07-Jul-03 2 Si7495DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 r DS(on) - On-Resistance ( W ) 11000 Ciss C - Capacitance (pF) 0.016 8800 Vishay Siliconix Capacitance 0.012 VGS = 1.8 V 0.008 VGS = 2.5 V VGS = 4.5 V 6600 4400 Coss 0.004 2200 Crss 0.000 0 8 16 24 32 40 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 22 44 66 88 110 Qg - Total Gate Charge (nC) VDS = 6 V ID = 21 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 21 A 1.4 r DS(on) - On-Resistance (W ) (Normalized) 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.030 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) TJ = 150_C 0.024 ID = 21 A 0.018 1 TJ = 25_C 0.012 0.006 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72277 S-31417—Rev. A, 07-Jul-03 www.vishay.com 3 Si7495DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 1 mA Power (W) 0.2 0.1 0.0 - 0.1 - 0.2 - 50 20 60 100 Single Pulse Power, Juncion-To-Ambient 80 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Limited by rDS(on) 10 I D - Drain Current (A) Safe Operating Area, Junction-to-Case 1 ms 10 ms 100 ms 1 1s 10 s dc 0.1 TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72277 S-31417—Rev. A, 07-Jul-03 Si7495DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72277 S-31417—Rev. A, 07-Jul-03 www.vishay.com 5