SI7802DN

SPICE Device Model Si7802DN Vishay Siliconix N-Channel 250-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73173 07-Oct-04 www.vishay.com 1 SPICE Device Model Si7802DN Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Conditions Simulated Data 2.8 14 0.362 0.369 4 0.74 Measured Data Unit VGS(th) ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 1.95 A VGS = 6 V, ID = 1.9 A VDS = 15 V, ID = 1.95 A IS = 3.2 A, VGS = 0 V V A 0.360 0.370 8 0.80 Ω S V Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage a Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 125 V, VGS = 10 V, ID = 1.95 A 12 2.8 4.4 14 2.8 4.4 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 73173 07-Oct-04 SPICE Device Model Si7802DN Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED) Document Number: 73173 07-Oct-04 www.vishay.com 3