SI7804DN-T1-E3

Si7804DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 10 8 rDS(on) (W) 0.0185 @ VGS = 10 V 0.030 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested RoHS COMPLIANT APPLICATIONS D DC/DC Conversion PowerPAK 1212-8 D 3.30 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 3.30 mm G S N-Channel MOSFET Bottom View Ordering Information: Si7804DN-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 10 7.5 40 2.9 3.5 1.9 Steady State Unit V 6.5 5.0 A 1.2 1.5 0.8 −55 to 150 260 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 28 65 4.5 Maximum 35 81 6.0 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72317 S-51129—Rev. D, 13-Jun-05 www.vishay.com 1 Si7804DN Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A VDS = 15 V, ID = 10 A IS = 2.9 A, VGS = 0 V 30 0.015 0.022 16 0.75 1.2 0.0185 0.030 0.8 1.8 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 5 V, ID = 10 A 8.7 1.5 3.5 1.4 8 12 32 14 30 2.2 15 20 50 25 60 ns W 13 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 5 V 35 30 I D − Drain Current (A) 25 20 15 10 5 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 3V I D − Drain Current (A) 4V 40 35 30 25 20 15 10 5 0 0.0 TC = −55_C 25_C Transfer Characteristics 125_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Document Number: 72317 S-51129—Rev. D, 13-Jun-05 2 Si7804DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) − On-Resistance ( W ) 1200 1000 C − Capacitance (pF) VGS = 4.5 V VGS = 10 V 0.016 800 600 400 Coss 200 Crss 0.000 0 5 10 15 20 25 30 0 0 4 8 12 16 20 Ciss Capacitance 0.032 0.024 0.008 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) VDS = 15 V ID = 9 A rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9 A −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.06 0.05 0.04 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) ID = 9 A 0.03 0.02 0.01 0.00 TJ = 25_C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) Document Number: 72317 S-51129—Rev. D, 13-Jun-05 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7804DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) −0.0 −0.2 −0.4 −0.6 −0.8 −50 10 30 50 Single Pulse Power, Juncion-To-Ambient 40 20 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 *Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area, Junction-to-Foot 1 ms 10 ms 1 100 ms 0.1 1s 10 s dc TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72317 S-51129—Rev. D, 13-Jun-05 Si7804DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72317. Document Number: 72317 S-51129—Rev. D, 13-Jun-05 www.vishay.com 5