SI7846DP-T1

Si7846DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.050 @ VGS = 10 V ID (A) 6.7 APPLICATIONS D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V DC/DC D Industrial and 42-V Automotive PowerPAK SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: Si7846DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS IS PD TJ, Tstg 10 secs 150 "20 6.7 5.4 50 25 4.3 5.2 3.3 Steady State Unit V 4.0 3.3 A 1.6 1.9 1.2 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71442 S-31728—Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W 1 Si7846DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V VDS = 120 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5 A VDS = 15 V, ID = 5 A IS = 2.8 A, VGS = 0 V 50 0.041 18 0.75 1.1 0.050 2.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/ms VDD = 75 V, RL = 15 W V, ID ^ 5 A, VGEN = 10 V, RG = 6 W 0.2 VDS = 75 V, VGS = 10 V, ID = 5 A 30 8.5 8.5 0.85 12 7 22 10 40 1.4 18 11 33 15 70 ns W 36 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 7 V 40 I D - Drain Current (A) 6V I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 10 25_C - 55_C 0 10 5V 3, 4 V 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71442 S-31728—Rev. B, 18-Aug-03 Si7846DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 0 10 20 30 40 50 0 30 60 90 120 150 Crss Coss 0.00 Capacitance 0.08 0.06 VGS = 10 V 0.04 Ciss 0.02 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 75 V ID = 5 A 16 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5 A 2.0 12 r DS(on) - On-Resistance (W ) (Normalized) 30 45 60 1.5 8 1.0 4 0.5 0 0 15 Qg - Total Gate Charge (nC) 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.15 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.12 ID = 5 A 0.09 I S - Source Current (A) TJ = 150_C 10 0.06 TJ = 25_C 0.03 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71442 S-31728—Rev. B, 18-Aug-03 www.vishay.com 3 Si7846DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 100 Avalanche Current vs. Time 0.5 V GS(th) Variance (V) ID = 250 mA I DAV (A) 10 T = 25_C 0.0 - 0.5 1 - 1.0 T = 125_C - 1.5 - 50 - 25 0 25 50 75 100 125 150 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 TJ - Temperature (_C) Time (sec) Single Pulse Power, Juncion-to-Ambient 100 80 Power (W) 60 40 20 0 0.001 0.01 0.1 Time (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71442 S-31728—Rev. B, 18-Aug-03 Si7846DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71442 S-31728—Rev. B, 18-Aug-03 www.vishay.com 5