SI7848DP-T1

Si7848DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 17 15 rDS(on) (W) 0.009 @ VGS = 10 V 0.012 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested APPLICATIONS D DC/DC Converters - Synchronous Buck - Synchronous Rectifier PowerPAK SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: Si7848DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS IS PD TJ, Tstg 10 secs 40 "20 17 13.7 50 30 4.5 5 3.2 Steady State Unit V 10.4 8.3 A 1.67 1.83 1.2 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71450 S-31728—Rev. C, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 20 55 1.8 Maximum 25 68 2.2 Unit _C/W 1 Si7848DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V VDS = 32 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A VDS = 15 V, ID = 14 A IS = 2.8 A, VGS = 0 V 50 0.0075 0.0095 50 0.75 1.1 0.009 0.012 1.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.1 VDS = 20 V, VGS = 5 V, ID = 14 A 18.5 6 7.5 0.8 15 10 50 20 30 1.1 30 20 100 40 60 ns W 28 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 3V 20 30 20 TC = 125_C 10 25_C -55_C 10 2 thru 0 V 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 71450 S-31728—Rev. C, 18-Aug-03 www.vishay.com 2 Si7848DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 r DS(on) - On-Resistance ( W ) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 0 10 20 30 40 50 0 8 16 24 32 40 Coss Crss Ciss Capacitance 0.016 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 0.000 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 20 V ID = 14 A 8 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 14 A 1.6 6 r DS(on) - On-Resistance ( W) (Normalized) 14 21 28 35 1.2 4 0.8 2 0.4 0 0 7 Qg - Total Gate Charge (nC) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 TJ = 150_C I S - Source Current (A) 0.04 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) ID = 14 A 0.03 10 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71450 S-31728—Rev. C, 18-Aug-03 www.vishay.com 3 Si7848DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 80 ID = 250 mA Power (W) 60 100 Single Pulse Power, Juncion-to-Ambient 40 20 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 55_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71450 S-31728—Rev. C, 18-Aug-03