Si7866DP
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0025 @ VGS = 10 V 0.00375 @ VGS = 4.5 V
ID (A)
29 25
D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized
APPLICATIONS
D Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops D Low Output Voltage Synchronous Rectifier
PowerPAKt SO-8
D 6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
G
S N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
20 "20 29
Steady State
Unit
V
18 14 60 A 1.6 1.9 1.2 -55 to 150 W _C
ID IDM IS PD TJ, Tstg
25
4.5 5.4 3.4
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71848 S-21412—Rev. B, 05-Aug-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7866DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 29 A VGS = 4.5 V, ID = 25 A VDS = 6 V, ID = 29 A IS = 4.5 A, VGS = 0 V 30 0.0020 0.0026 95 0.68 1.1 0.0025 0.00375 S V 0.8 2.1 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 29 A 40 15 11 1.2 70 60 105 55 65 100 90 160 85 100 ns W 60 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60 VGS = 10 thru 3 V 50 50 60
Transfer Characteristics
I D - Drain Current (A)
40
I D - Drain Current (A)
40
30
30 TC = 125_C 20 25_C -55 _C
20
10
10
0 0 1 2 3 4 5
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V) Document Number: 71848 S-21412—Rev. B, 05-Aug-02
www.vishay.com
2
Si7866DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.005 8000
Vishay Siliconix
Capacitance
r DS(on) - On-Resistance ( W )
0.004 VGS = 4.5 V 0.003 VGS = 10 V 0.002 C - Capacitance (pF)
6400
Ciss
4800
3200 Coss 1600 Crss
0.001
0.000 0 10 20 30 40 50 60
0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6.0 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 29 A 2.0 1.8 r DS(on) - On-Resistance ( W) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.0 0 12 24 36 48 60 0.6 -50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 29 A
4.8
3.6
2.4
1.2
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60 0.010
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10 TJ = 25_C
r DS(on) - On-Resistance ( W )
0.008
I S - Source Current (A)
0.006 ID = 29 A 0.004
0.002
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.000 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71848 S-21412—Rev. B, 05-Aug-02
www.vishay.com
3
Si7866DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 200
Single Pulse Power
0.2 V GS(th) Variance (V)
160 ID = 250 mA Power (W) 120
-0.0
-0.2
80
-0.4
40
-0.6 -50
-25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (sec)
1
10
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 50_C/W
Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 Single Pulse 0.05 0.02
0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
4
Document Number: 71848 S-21412—Rev. B, 05-Aug-02
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