SI7872DP

Si7872DP New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.022 @ VGS = 10 V 0.028 @ VGS = 4.5 V ID (A) 10 8 10 8 FEATURES D LITTLE FOOT Plust Schottky D PWM Optimized D New Low Thermal Resistance PowerPAK package with low 1.07 mm profile APPLICATIONS D Asymmetrical Buck-Boost DC/DC Converter SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 3.0 D1 D2 PowerPAKt SO-8 6.15 mm S1 1 2 5.15 mm G1 S2 3 4 D1 G2 G1 Schottky Diode G2 8 7 D1 D2 6 5 D2 S1 Bottom View N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) 10 secs Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Steady State Channel-1 30 "20 6.4 5.1 30 A 1.1 1.4 0.9 -55 to 150 W _C Symbol VDS VGS ID IDM IS PD TJ, Tstg Channel-1 "20 10 7 Channel-2 "12 Channel-2 "12 Unit V 2.9 3.5 2.2 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com Steady-State Steady-State RthJA RthJC Schottky Typical 26 60 4.1 Symbol Typical 26 60 4.1 Maximum 35 85 6.0 Maximum 35 85 6.0 Unit _C/W 1 Si7872DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 6.5 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 15 V, ID = 7.5 A IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 20 0.017 0.016 0.024 0.020 19 21 0.75 0.47 1.2 0.5 V S 0.022 0.022 0.030 0.028 W A 1.0 0.8 3.0 2.0 "100 "100 1 100 15 2000 mA V Symbol Test Condition Min Typa Max Unit Gate-Body Leakage nA Dynamica Total Gate Charge Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDS = 15 V, VGS = 4.5 V, ID = 7.5 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Gate-Drain Charge Ch-2 Ch-1 Gate Resistance Ch-2 Ch-1 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ch-2 Ch-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 7 11.5 2.9 3.8 2.5 3.5 1.5 1.8 9 12 10 10 19 40 9 9 35 28 15 20 17 17 30 66 15 15 55 45 ns W 11 18 nC Gate-Source Charge Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = -30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current Junction Capacitance Irm CT mA pF www.vishay.com 2 Document Number: 72035 S-21978—Rev. A, 04-Nov-02 Si7872DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 4V 25 I D - Drain Current (A) I D - Drain Current (A) 25 30 Vishay Siliconix MOSFET CHANNEL−1 Transfer Characteristics 20 20 15 15 10 10 TC = 125_C 25_C 5 3V 0 0 2 4 6 8 10 5 -55 _C 3 4 5 0 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 1200 Capacitance 0.030 VGS = 4.5 V 0.020 C - Capacitance (pF) 960 Ciss 720 VGS = 10 V 480 Coss 0.010 240 Crss 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A r DS(on) - On-Resistance (W ) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si7872DP Vishay Siliconix New Product MOSFET CHANNEL−1 On-Resistance vs. Gate-to-Source Voltage 0.06 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.05 0.04 ID = 7.5 A 0.03 TJ = 150_C 1 0.02 TJ = 25_C 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 100 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) 80 60 -0.2 40 -0.4 20 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Foot 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) 1 ms 10 ms 1 ID(on) Limited TC = 25_C Single Pulse 100 ms 1s 10 s dc BVDSS Limited 1 10 100 0.1 0.01 0.1 VDS - Drain-to-Source Voltage (V) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com 4 Si7872DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Vishay Siliconix MOSFET CHANNEL 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com 5 Si7872DP Vishay Siliconix New Product MOSFET CHANNEL−2 Transfer Characteristics 30 VGS = 10 thru 4 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 20 3V 15 20 15 10 10 TC = 125_C 5 25_C -55 _C 5 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 2000 Capacitance C - Capacitance (pF) 0.032 1600 Ciss 1200 0.024 VGS = 4.5 V VGS = 10 V 0.016 800 0.008 400 Crss Coss 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A r DS(on) - On-Resistance (W ) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) www.vishay.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 6 Si7872DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.04 ID = 7.5 A I S - Source Current (A) 0.05 Vishay Siliconix MOSFET CHANNEL−2 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 0.03 1 TJ = 25_C 0.02 0.01 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 80 0.2 V GS(th) Variance (V) 0.1 -0.0 -0.1 -0.2 20 -0.3 -0.4 -50 0 10- 3 ID = 250 mA Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 40 -25 0 25 50 75 100 125 150 10- 2 10- 1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Foot 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) 1 ms 10 ms 1 ID(on) Limited TC = 25_C Single Pulse 100 ms 1s 10 s dc BVDSS Limited 1 10 100 0.1 0.01 0.1 VDS - Drain-to-Source Voltage (V) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com 7 Si7872DP Vishay Siliconix New Product MOSFET CHANNEL−2 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 www.vishay.com 8 Document Number: 72035 S-21978—Rev. A, 04-Nov-02 Si7872DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 10 TJ = 150_C 1 I F - Forward Current (A) Vishay Siliconix SCHOTTKY Forward Voltage Drop 20 10 I R - Reverse Current (mA) 0.1 30 V 24 V TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 160 C - Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 72035 S-21978—Rev. A, 04-Nov-02 www.vishay.com 9