SI7880DP

Si7880DP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile ID (A) 29 25 PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.00425 @ VGS = 4.5 V APPLICATIONS D DC/DC Converters – Low-Side MOSFET in Synchronous Buck in Desktops D Secondary Synchronous Rectifier PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 29 Steady State Unit V 18 14 60 A 1.6 1.9 1.2 –55 to 150 W _C ID IDM IS PD TJ, Tstg 25 4.5 5.4 3.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71875 S-20919—Rev. A, 01-Jul-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7880DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 29 A VGS = 4.5 V, ID = 25 A VDS = 6 V, ID = 29 A IS = 4.5 A, VGS = 0 V 30 0.0025 0.0035 90 0.68 1.1 0.0030 0.00425 S V 1.0 3.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 29 A 40.5 18 10.5 1.2 30 15 110 35 55 50 25 200 60 80 ns W 60 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 50 60 Transfer Characteristics I D – Drain Current (A) 40 I D – Drain Current (A) 40 30 3V 20 30 TC = 125_C 25_C –55_C 20 10 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71875 S-20919—Rev. A, 01-Jul-02 www.vishay.com 2 Si7880DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.005 8000 Vishay Siliconix Capacitance r DS(on) – On-Resistance ( W ) 0.004 VGS = 4.5 V C – Capacitance (pF) 6400 Ciss 0.003 VGS = 10 V 4800 0.002 3200 Coss 1600 Crss 0.001 0.000 0 10 20 30 40 50 60 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 29 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 29 A r DS(on) – On-Resistance ( W) (Normalized) 36 54 72 90 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 18 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.010 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C r DS(on) – On-Resistance ( W ) 0.008 I S – Source Current (A) 0.006 ID = 29 A 0.004 0.002 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Document Number: 71875 S-20919—Rev. A, 01-Jul-02 www.vishay.com 3 Si7880DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 160 V GS(th) Variance (V) –0.0 –0.2 –0.4 –0.6 –0.8 –1.0 –50 40 ID = 250 mA Power (W) 120 200 Single Pulse Power 80 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D – Drain Current (A) 10 ms 100 ms 1s TC = 25_C Single Pulse 10 s dc 1 ms 1 0.1 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 1 Square Wave Pulse Duration (sec) 10–1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71875 S-20919—Rev. A, 01-Jul-02 Si7880DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71875 S-20919—Rev. A, 01-Jul-02 www.vishay.com 5