SI7892DP-T1-E3

Specification Comparison Vishay Siliconix Si7892BDP vs. Si7892DP Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET PowerPAK® SO-8 Identical Part Number Replacements: Si7892BDP-T1-E3 Replaces Si7892DP-T1-E3 Si7892BDP-T1-E3 Replaces Si7892DP-T1 Summary of Performance: The Si7892BDP is the replacement to the original Si7892DP; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si7892BDP Si7892DP Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Avalanche Current Power Dissipation TA = 25°C TA = 70°C VDS VGS ID IDM IS L = 0.1 mH TA = 25°C IAS PD Tj & Tstg RthJA 30 +20 25 20 60 4.1 40 5 3.2 -55 to 150 25 30 +20 25 20 60 4.5 50 5.4 3.4 -55 to 150 23 W °C °C/W A V TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS= 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr 30 0.0034 0.0047 85 0.75 3775 630 295 27 11.4 8.1 1.2 20 13 62 20 40 40 1.2 0.0042 0.0057 1.0 3.0 +100 1 30 0.0037 0.0048 80 0.75 NS NS NS 25 6.7 9.7 NS 17 10 65 35 50 35 nC 2.4 30 20 130 60 80 ns Ω pF 1.2 0.0045 0.006 1.0 3.0 +100 1 V nA µA A Ω S V Symbol Min Si7892BDP Typ Max Min Si7892DP Typ Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 0.5 2.0 30 20 100 35 60 0.5 Switching Turn-On Time* Turn-Off Time* Source-Drain Reverse Recovery Time Document Number 74064 06-May-05 www.vishay.com